欢迎访问ic37.com |
会员登录 免费注册
发布采购

NESG2101M05-T1-A 参数 Datasheet PDF下载

NESG2101M05-T1-A图片预览
型号: NESG2101M05-T1-A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗高频三极管 [NPN SiGe HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 15 页 / 579 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
 浏览型号NESG2101M05-T1-A的Datasheet PDF文件第1页浏览型号NESG2101M05-T1-A的Datasheet PDF文件第2页浏览型号NESG2101M05-T1-A的Datasheet PDF文件第4页浏览型号NESG2101M05-T1-A的Datasheet PDF文件第5页浏览型号NESG2101M05-T1-A的Datasheet PDF文件第6页浏览型号NESG2101M05-T1-A的Datasheet PDF文件第7页浏览型号NESG2101M05-T1-A的Datasheet PDF文件第8页浏览型号NESG2101M05-T1-A的Datasheet PDF文件第9页  
NESG2101M05
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
100
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 4 V
V
CE
= 3 V
Collector Current, Ic (mA)
Collector Current, Ic (mA)
10
1
0.1
0.01
0.001
0.0001
0.4
0.01
0.001
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage, V
BE
(V)
Base to Emitter Voltage, V
BE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
90
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 1 V
Collector Current, Ic (mA)
80
70
60
50
40
30
20
10
500
µ
A
400
µ
A
350
µ
A
300
µ
A
250
µ
A
200
µ
A
150
µ
A
100
µ
A
DC Current Gain, h
FE
450
µ
A
100
I
B
= 50
µ
A
0
1
2
3
4
5
6
10
0.1
1
10
100
Collector to Emitter Voltage, V
CE
(V)
Collector Current, l
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 2 V
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
DC Current Gain, h
FE
DC Current Gain, h
FE
100
100
10
0.1
Collector Current, l
C
(mA)
1
10
100
10
0.1
1
10
100
Collector Current, l
C
(mA)