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NESG2101M05-T1-A 参数 Datasheet PDF下载

NESG2101M05-T1-A图片预览
型号: NESG2101M05-T1-A
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅锗高频三极管 [NPN SiGe HIGH FREQUENCY TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 15 页 / 579 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NESG2101M05
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
Gain Bandwidth Product, f
T
(GHz)
V
CE
= 4 V
V
CE
= 1 V
f = 2 GHz
DC Current Gain, h
FE
15
100
10
5
10
0.1
1
10
100
0
Collector Current, l
C
(mA)
1
Collector Current, l
C
(mA)
10
100
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
Gain Bandwidth Product, f
T
(GHz)
15
Gain Bandwidth Product, f
T
(GHz)
V
CE
= 2 V
f = 2 GHz
V
CE
= 3 V
f = 2 GHz
15
10
10
5
5
0
1
10
100
0
1
10
100
Collector Current, l
C
(mA)
Collector Current, l
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Gain Bandwidth Product, f
T
(GHz)
V
CE
= 4 V
f = 2 GHz
INSERTION POWER GAIN, MAG, MSG
vs. FREQUENCY
Insertion Power Gain, IS
21e
I
2
(dB)
Maximum Available Gain, MAG (dB)
Maximum Stable Power Gain, MSG (dB)
40
V
CE
= 1 V
I
C
= 50 mA
35
20
MSG
30
25
20
15
15
MAG
10
2
|S21e|
10
5
0
0.1
5
0
1
10
100
1
10
100
Collector Current, l
C
(mA)
Frequency, f (GHz)