CEM8207
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
Min Typ Max Unit
0.75 1.2
V
C
DRAIN-SOURCE DIODE CHARACTERISTICS
b
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20
25
V
GS
=4.5,3.5,2.5V
16
V
GS
=2.0V
20
I
D
, Drain Current(A)
I
D
, Drain Current (A)
12
15
8
10
4
5
Tj=125 C
0
0.0
0.5
1
1.5
25 C
-55 C
2
2.5
3
V
GS
=1.5V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
R
DS(ON)
, Normalized
R
DS(ON)
,
On-Resistance(Ohms)
2400
2000
Figure 2. Transfer Characteristics
1.80
1.60
1.40
1.20
1.00
0.80
0.60
-50 -25
0
25
50
75
100 125 150
I
D
=6.0A
V
GS
=4.5V
C, Capacitance (pF)
1600
1200
800
Coss
400
Crss
0
Ciss
0
2
4
6
8
10
12
V
DS
, Drain-to Source Voltage (V)
T
J
, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Temperature
5-80
CET [ CHINO-EXCEL TECHNOLOGY ]
