CEM8207
BV
DSS
, Normalized
Drain-Source Breakdown Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.60
1.40
1.20
1.00
0.80
0.60
0.40
-50 -25
0
25
50
75 100 125 150
V
DS
=V
GS
I
D
=250 A
1.15
I
D
=250 A
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
5
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
30
Figure 6. Breakdown Voltage Variation
with Temperature
50
g
FS
, Transconductance (S)
Is, Source-drain current (A)
25
20
15
10
V
DS
=10V
5
0
0
3
6
9
12
15
10
1
0.1
0.4
0.6
0.8
1.0
1.2
I
DS
, Drain-Source Current (A)
V
SD
, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
5
I
D
, Drain Current (A)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
GS
, Gate to Source Voltage (V)
4
3
2
1
0
0
V
DS
=4.5V
I
D
=6A
10
1
RD
O
S(
N)
Lim
it
10
1m
m
s
10
10
s
0m
1s
s
s
10
0
DC
10
-1
-2
10
T
A
=25 C
Tj=150 C
Single Pulse
10
1
10
0
10
1
2
4
6
8
10 12 14 16
10
-1
Qg, Total Gate Charge (nC)
V
DS
, Drain-Source Voltage (V)
Figure 9. Gate Charge
5-81
Figure 10. Maximum Safe
Operating Area
CET [ CHINO-EXCEL TECHNOLOGY ]
