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IX2127_11 参数 Datasheet PDF下载

IX2127_11图片预览
型号: IX2127_11
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压功率MOSFET和IGBT驱动器 [High-Voltage Power MOSFET & IGBT Driver]
分类和应用: 驱动器双极性晶体管
文件页数/大小: 12 页 / 1636 K
品牌: CLARE [ CLARE, INC. ]
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IX2127
1 Specifications
1.1 Package Pinout
1.2 Pin Description
Pin#
Name
V
CC
IN
FAULT
COM
V
S
CS
HO
V
B
Description
Logic Supply Voltage
Logic Input
Fault Indicator Output
Logic Ground
High Side Return
Comparator Input,
Over-Current Detect
High Side Gate Drive Output
High Side Supply Voltage
V
CC
IN
FAULT
COM
1
2
3
4
8
7
6
5
V
B
HO
CS
V
S
1
2
3
4
5
6
7
8
1.3 Absolute Maximum Ratings
Unless otherwise specified, ratings are provided at T
A
=25°C and all bias levels are with respect to COM.
Parameter
Logic Supply Voltage
High Side Floating Supply Voltage
High Side Floating Offset Voltage
Logic Input Voltage
High Side Floating Output Voltage
Current Sense Voltage
FAULT Output Voltage
Allowable Offset Supply Voltage Transient
Package Power Dissipation
8-Lead DIP
8-Lead SOIC
Junction Temperature
Storage Temperature
Absolute maximum electrical ratings are at 25°C
Absolute maximum ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Symbol
V
CC
V
B
V
S
V
IN
V
HO
V
CS
V
FLT
dV
S
/dt
Minimum
-0.3
-0.3
V
B
-12
-0.3
V
S
-0.3
V
S
-0.3
-0.3
-
-
-
-
-55
Maximum
15
625
V
B
+0.3
V
CC
+0.3
V
B
+0.3
V
B
+0.3
V
CC
+0.3
50
1
0.625
150
150
Units
V
V/ns
P
D
T
J
T
S
W
°C
R02
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