欢迎访问ic37.com |
会员登录 免费注册
发布采购

IX2127_11 参数 Datasheet PDF下载

IX2127_11图片预览
型号: IX2127_11
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压功率MOSFET和IGBT驱动器 [High-Voltage Power MOSFET & IGBT Driver]
分类和应用: 驱动器双极性晶体管
文件页数/大小: 12 页 / 1636 K
品牌: CLARE [ CLARE, INC. ]
 浏览型号IX2127_11的Datasheet PDF文件第1页浏览型号IX2127_11的Datasheet PDF文件第2页浏览型号IX2127_11的Datasheet PDF文件第3页浏览型号IX2127_11的Datasheet PDF文件第4页浏览型号IX2127_11的Datasheet PDF文件第6页浏览型号IX2127_11的Datasheet PDF文件第7页浏览型号IX2127_11的Datasheet PDF文件第8页浏览型号IX2127_11的Datasheet PDF文件第9页  
IX2127
1.6.3 Logic I/O Specifications
Parameter
Logic “1” Input Voltage
Logic “0” Input Voltage
Logic “1” Input Bias Current
Logic “0” Input Bias Current
FAULT On-Resistance
1.6.4 Thermal Specifications
Parameter
Thermal Resistance, Junction to Ambient:
8-Lead DIP
8-Lead SOIC
Conditions
Symbol
Minimum
-
-
Conditions
V
CC
=9V to 12V
V
CC
=9V to 12V
V
IN
=5V
V
IN
=0V
-
Symbol
V
IH
V
IL
I
IN+
I
IN-
FLT, R
ON
Minimum
3.0
-
-
-
-
Typical
-
-
2.6
-
72
Maximum
-
0.8
15
-1
-
Units
V
A
Typical
-
-
Maximum
125
200
Units
-
R
JA
°C/W
1.7 Timing Characteristics
Parameter
Turn-On Propagation Delay
Turn-Off Propagation Delay
Turn-On Rise Time
Turn-Off Fall Time
Start-Up Blanking Delay
CS Shutdown Propagation Delay
CS to FLT Propagation Delay
Figure 1. Typical Connection Diagram
V
CC
=V
BS
=12V,
C
L
=1nF,
T
A
=25°C
Conditions
Symbol
t
on
t
off
t
r
t
f
t
blk
t
CS
t
FLT
Minimum
-
-
-
-
550
-
-
Typical
100
73
23
20
766
220
236
Maximum
200
200
130
65
950
360
510
Units
ns
V
CC
IN
FAULT
1 V
CC
2 IN
3 FAULT
4 COM
V
B
8
R
GATE
HO 7
CS 6
V
S
5
R02
www.clare.com
5