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IX2127_11 参数 Datasheet PDF下载

IX2127_11图片预览
型号: IX2127_11
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压功率MOSFET和IGBT驱动器 [High-Voltage Power MOSFET & IGBT Driver]
分类和应用: 驱动器双极性晶体管
文件页数/大小: 12 页 / 1636 K
品牌: CLARE [ CLARE, INC. ]
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IX2127
1.4 Recommended Operating Conditions
Parameter
Logic Supply
High Side Floating Supply
High Side Offset Voltage
Logic Input Voltage
High Side Floating Output
Current Sense Signal Voltage
FAULT Output Voltage
Ambient Temperature
1.5 General Conditions
Typical values are characteristic of the device at 25°C
and are the result of engineering evaluations. They are
provided for information purposes only and are not
part of the manufacturing testing requirements.
1.6 Electrical Characteristics
Unless otherwise specified, the test conditions are: V
CC
=V
BS
=12V; V
CC
, IN, FAULT, and Leakage voltages and
currents are referenced to COM; V
B
, HO, and CS voltages and currents are referenced to V
S
.
1.6.1 Power Supply Specifications
Parameter
Quiescent V
CC
Supply Current
Quiescent V
BS
Supply Current
V
BS
UVLO Positive-Going Threshold
V
BS
UVLO Negative-Going Threshold
Offset Supply Leakage Current
1.6.2 Gate Drive and Shutdown Specifications
Parameter
High Level Output Voltage, V
B
-V
HO
Low Level Output Voltage, V
HO
Output Short Circuit Pulsed Current
Conditions
I
HO
=0A
I
HO
=0A
V
HO
=0V, V
IN
=5V, PW<10s,
R
GATE
=20* (see Figure 1)
V
HO
=12V, V
IN
=0V, PW<10s,
R
GATE
=20* (see Figure 1)
V
CC
=9V to 12V
V
CS
=3V
V
CS
=0V
* R
GATE
value must be 20 or greater.
4
Symbol
V
CC
V
B
V
S
V
IN
V
HO
V
CS
V
FLT
T
A
Minimum
9
V
S
+9
-5
0
V
S
V
S
0
-40
Maximum
12
V
S
+12
600
V
CC
V
B
V
S
+5
V
CC
+125
Units
V
°C
Unless otherwise noted, all electrical specifications
are listed for T
A
=25°C.
Conditions
V
IN
=0V
V
IN
=0V
-
-
V
B
=V
S
=600V
Symbol
I
QCC
I
QBS
V
BS_UV+
V
BS_UV-
I
LKG
Minimum
-
-
6.8
6.3
-
Typical
280
500
7.7
7.2
-
Maximum
400
1000
8.6
8.1
2
Units
A
V
A
Symbol
V
OH
V
OL
Minimum
-
-
Typical
-
-
Maximum
100
100
Units
mV
I
HO+
I
HO-
V
CS_TH+
I
CS+
I
CS-
-200
420
180
-
-
-250
500
260
-
-
-
mA
-
320
1
-1
mV
A
CS Input, Positive-Going Threshold
“High” CS Bias Current
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