General Purpose Transistor (PNP)
COMCHIP
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MMBT2907A
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available (MMBT2222A)
Ideal for Medium Power Amplification and Switching
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
3
.056 (1.43
)
.052 (1.33
)
1
2
max. .004 (0.1)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
Mechanical Data
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008g
Top View
COLLECTOR
3
1
BASE
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
2
EMITTER
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
Symbol
PD
2907
–40
–60
–5.0
–600
Max
225
1.8
R
q
JA
PD
556
300
2.4
R
q
JA
TJ, Tstg
417
– 55 to +150
2907A
–60
Ratings at 25°C ambient temperature unless otherwise specified.
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
MDS030300B1
Page 1
.045 (1.15)
.037 (0.95)
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