General Purpose Transistor (PNP)
TYPICAL CHARACTERISTICS
3.0
2.0
VCE = –1.0 V
VCE = –10 V
TJ = 125°C
25°C
1.0
0.7
0.5
0.3
0.2
–0.1
– 55°C
COMCHIP
www.comchiptech.com
hFE , Normalized Current Gain
–0.2 –0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50 –70 –100
–200 –300
–500
I C, Collector Current (mA)
Figure 3. DC Current Gain
–1.0
VCE , Collector–Emitter Voltage (V)
–0.8
IC = –1.0 mA
–0.6
–10 mA
–100 mA
–500 mA
–0.4
–0.2
0
–0.005
–0.01
–0.02 –0.03 –0.05 –0.07 –0.1
–0.2
–0.3 –0.5 –0.7 –1.0
I B, Base Current (mA)
–2.0
–3.0
–5.0 –7.0 –10
–20 –30
–50
Figure 4. Collector Saturation Region
300
200
100
70
50
30
20
td @ VBE(off) = 0 V
10
7.0
5.0
3.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
IC, Collector Current
tr
500
VCC = –30 V
IC/IB = 10
TJ = 25°C
300
200
tf
100
70
50
30
20
2.0 V
–200 –300 –500
10
7.0
5.0
–5.0 –7.0 –10
t′s = ts – 1/8 tf
VCC = –30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
t, Time (ns)
t, Time (ns)
–20 –30
–50 –70 –100
I C, Collector Current (mA)
–200 –300 –500
Figure 5. Turn–On Time
MDS030300B1
MDS030300
Figure 6. Turn–Off Time
Page 4
COMCHIP [ COMCHIP TECHNOLOGY ]
