General Purpose
Transistor (PNP)
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
COMCHIP
www.comchiptech.com
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(3)
(IC = –10 mAdc, IB = 0)
Collector – Base Breakdown Voltage (IC = –10
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage (IE = –10
m
Adc, IC = 0)
Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc)
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
IB
V(BR)CEO
MMBT2907
MMBT2907A
V(BR)CBO
V(BR)EBO
ICEX
ICBO
—
—
—
—
—
–0.020
–0.010
–20
–10
–50
nAdc
–40
–60
–60
–5.0
—
—
—
—
—
–50
Vdc
Vdc
nAdc
µAdc
Vdc
(VCB = –50 Vdc, IE = 0, TA = 125°C)
Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
hFE
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
MMBT2907
MMBT2907A
VCE(sat)
—
—
VBE(sat)
—
—
–1.3
–2.6
–0.4
–1.6
Vdc
35
75
50
100
75
100
—
100
30
50
—
—
—
—
—
—
—
300
—
—
Vdc
—
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc) (3)
(IC = –500 mAdc, VCE = –10 Vdc) (3)
Collector – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base – Emitter Saturation Voltage (3)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
1.FR-5 = 1.0 X 0.75 X 0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
MDS030300B1
Page 2
COMCHIP [ COMCHIP TECHNOLOGY ]
