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CY7C1049CV33-10VC 参数 Datasheet PDF下载

CY7C1049CV33-10VC图片预览
型号: CY7C1049CV33-10VC
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8静态RAM [512K x 8 Static RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 196 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1049CV33
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[3]
DC Voltage Applied to Outputs
in High-Z State
[3]
.................................... –0.5V to V
CC
+ 0.5V
DC Input Voltage
[3]
................................ –0.5V to V
CC
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Operating Range
Range
Commercial
Industrial
Automotive
Ambient Temperature
0°C to +70°C
–40°C to +85°C
–40°C to +125°C
V
CC
3.3V
±
0.3V
.... –0.5V to +4.6V
Electrical Characteristics
Over the Operating Range
Parame-
ter
V
OH
V
OL
V
IH
V
IL
I
IX
-8
[]
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
[3]
Input Load Current
GND < V
I
< V
CC
Com’l / Ind’l
Automotive
I
OZ
Output Leakage
Current
V
CC
Operating
Supply Current
GND < V
OUT
<
V
CC
,
Output Disabled
V
CC
= Max.,
f = f
MAX
= 1/t
RC
Com’l / Ind’l
Automotive
Com’l
Ind’l
Automotive
I
SB1
Automatic CE
Power-down Current
—TTL Inputs
Automatic CE
Power-down Current
—CMOS Inputs
Max. V
CC
, CE > Com’l / Ind’l
V
IH
; V
IN
> V
IH
or Automotive
V
IN
< V
IL
, f = f
MAX
Max. V
CC
,
Com’l/Ind’l
CE > V
CC
– 0.3V, Automotive
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
Test Conditions
V
CC
= Min.; I
OH
= –4.0 mA
V
CC
= Min.,; I
OL
= 8.0 mA
2.0
–0.3
–1
-
–1
-
2.4
0.4
V
CC
+ 0.3
0.8
+1
-
+1
-
100
110
-
40
-
10
-
2.0
–0.3
–1
-
–1
-
2.4
0.4
V
CC
+ 0.3
0.8
+1
-
+1
-
90
100
-
40
-
10
-
2.0
–0.3
–1
-
–1
-
-10
2.4
0.4
V
CC
+ 0.3
0.8
+1
-
+1
-
85
95
-
40
-
10
-
2.0
–0.3
–1
–20
–1
–20
-12
2.4
0.4
V
CC
+ 0.3
0.8
+1
+20
+1
+20
80
90
95
40
45
10
15
-15
V
V
V
V
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
Min. Max. Min. Max. Min. Max. Min. Max. Unit
I
CC
I
SB2
Capacitance
[4]
Parameter
C
IN
C
OUT
Description
Input Capacitance
I/O Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 3.3V
Max.
8
8
Unit
pF
pF
Thermal Resistance
[4]
Parameter
Description
Test Conditions
36-pin SOJ
(Non
Pb-Free)
46.51
36-pin SOJ
( Pb-Free)
46.51
44-TSOP-II
(Non
Pb-Free)
41.66
44-TSOP-II
( Pb-Free)
41.66
Unit
°C/W
Θ
JA
Θ
JC
Thermal Resistance Test conditions follow
standard test methods
(Junction to
and procedures for
Ambient)
Thermal Resistance measuring thermal
(Junction to Case) impedance, per EIA /
JESD51.
18.8
18.8
10.56
10.56
°C/W
Notes:
3. V
IL
(min.) = –2.0V and V
IH
(max) = V
CC
+ 0.5V for pulse durations of less than 20 ns.
4. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05006 Rev. *C
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