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CY7C1049CV33-10VC 参数 Datasheet PDF下载

CY7C1049CV33-10VC图片预览
型号: CY7C1049CV33-10VC
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8静态RAM [512K x 8 Static RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 196 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1049CV33
AC Test Loads and Waveforms
[5]
8-, 10-ns devices:
OUTPUT
50Ω
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
1.5V
12-, 15-ns devices:
Z = 50Ω
3.3V
R 317Ω
30 pF*
OUTPUT
30 pF
R2
351Ω
(a)
High-Z characteristics:
3.0V
90%
GND
10%
ALL INPUT PULSES
90%
10%
3.3V
OUTPUT
5 pF
(b)
R 317Ω
R2
351Ω
Rise Time: 1 V/ns
(c)
Fall Time: 1 V/ns
(d)
AC Switching Characteristics
[6]
Over the Operating Range
-8
[]
Parameter
Read Cycle
t
power[7]
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
LZOE
t
HZOE
t
LZCE
t
HZCE
t
PU
t
PD
Write
t
WC
t
SCE
t
AW
t
HA
t
SA
t
PWE
t
SD
t
HD
t
LZWE
t
HZWE
V
CC
(typical) to the first access
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low-Z
OE HIGH to High-Z
[8, 9]
CE LOW to Low-Z
[9]
CE HIGH to High-Z
[8, 9]
CE LOW to Power-up
CE HIGH to Power-down
Cycle
[10, 11]
Write Cycle Time
CE LOW to Write End
Address Set-up to Write End
Address Hold from Write End
Address Set-up to Write Start
WE Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE HIGH to Low-Z
[9]
WE LOW to High-Z
[8, 9]
8
6
6
0
0
6
4
0
3
4
10
7
7
0
0
7
5
0
3
5
12
8
8
0
0
8
6
0
3
6
15
10
10
0
0
10
7
0
3
7
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
0
8
3
4
0
10
0
4
3
5
0
12
3
8
4
0
5
3
6
0
15
1
8
8
3
10
5
0
6
3
7
1
10
10
3
12
6
0
7
1
12
12
1
15
15
3
15
7
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Description
Min.
Max.
Min.
-10
Max.
Min.
-12
Max.
Min.
-15
Max.
Unit
Notes:
5. AC characteristics (except High-Z) for all 8-ns and 10-ns parts are tested using the load conditions shown in Figure (a). All other speeds are tested using the
Thevenin load shown in Figure (b). High-Z characteristics are tested for all speeds using the test load shown in Figure (d).
Document #: 38-05006 Rev. *C
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