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CY7C1352B-100AC 参数 Datasheet PDF下载

CY7C1352B-100AC图片预览
型号: CY7C1352B-100AC
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×18 Pipilined SRAM与NOBL架构 [256K x 18 Pipilined SRAm with NoBL Architecture]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 190 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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PRELIMINARY
Burst Write Accesses
The CY7C1352B has an on-chip burst counter that allows the
user the ability to supply a single address and conduct up to
four Write operations without reasserting the address inputs.
ADV/LD must be driven LOW in order to load the initial ad-
dress, as described in the Single Write Access section above.
CY7C1352B
When ADV/LD is driven HIGH on the subsequent clock rise,
the chip enables (CE
1
, CE
2
, and CE
3
) and WE inputs are ig-
nored and the burst counter is incremented. The correct
BWS
[1:0]
inputs must be driven in each cycle of the burst write
in order to write the correct bytes of data.
Cycle Description Truth Table
[
1, 2, 3, 4, 5, 6
]
Operation
Deselected
Suspend
Begin Read
Begin Write
Burst READ
Operation
Address
used
External
-
External
External
Internal
CE
1
X
0
0
X
CEN
0
1
0
0
0
ADV/
LD/
L
X
0
0
1
WE
X
X
1
0
X
BWS
x
X
X
X
Valid
X
CLK
L-H
L-H
L-H
L-H
L-H
Comments
I/Os three-state following next rec-
ognized clock.
Clock ignored, all operations
suspended.
Address latched.
Address latched, data presented
two valid clocks later.
Burst Read operation. Previous ac-
cess was a Read operation. Ad-
dresses incremented internally in
conjunction with the state of MODE.
Burst Write operation. Previous ac-
cess was a Write operation. Ad-
dresses incremented internally in
conjunction with the state of MODE.
Bytes written are determined by
BWS
[1:0]
.
Burst WRITE
Operation
Internal
X
0
1
X
Valid
L-H
Interleaved Burst Sequence
First
Address
Ax+1, Ax
00
01
10
11
Second
Address
Ax+1, Ax
01
00
11
10
Third
Address
Ax+1, Ax
10
11
00
01
Fourth
Address
Ax+1, Ax
11
10
01
00
Linear Burst Sequence
First
Address
Ax+1, Ax
00
01
10
11
Second
Address
Ax+1, Ax
01
10
11
00
Third
Address
Ax+1, Ax
10
11
00
01
Fourth
Address
Ax+1, Ax
11
00
01
10
Write Cycle Descriptions
[1, 2]
Function
Read
Write
No bytes written
Write Byte 0
(DQ
[7:0]
and DP
0
)
Write Byte 1
(DQ
[15:8]
and DP
1
)
Write All Bytes
WE
1
0
0
0
0
BWS
1
X
1
1
0
0
BWS
0
X
1
0
1
0
Notes:
1. X=”Don't Care”, 1=Logic HIGH, 0=Logic LOW, CE stands for ALL Chip Enables active. BWSx = 0 signifies at least one Byte Write Select is active, BWSx =
Valid signifies that the desired byte write selects are asserted, see Write Cycle Description table for details.
2. Write is defined by WE and BWS[1:0]. See Write Cycle Description table for details.
3. The DQ and DP pins are controlled by the current cycle and the OE signal.
4. CEN=1 inserts wait states.
5. Device will power-up deselected and the I/Os in a three-state condition, regardless of OE.
6. OE assumed LOW.
5