CYStech Electronics Corp.
Absolute Maximum Ratings
(Tc=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date :
Page No. : 2/6
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C
Continuous Drain Current @ T
C
=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=8A, R
G
=25Ω
Repetitive Avalanche Energy @ L=0.05mH
T
A
=25
°C
Total Power Dissipation
T
A
=100
°C
Operating Junction and Storage Temperature
Note : *1
.
Pulse width limited by maximum junction temperature
*2. Duty cycle
≤
1%
V
DS
V
GS
I
D
I
D
I
DM
I
AS
E
AS
E
AR
P
D
Tj, Tstg
30
±20
8
6
32 *1
8
3.2
1.6 *2
3
1.5
-55~+175
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient
(Note)
Note : 50°C / W when mounted on a 1 in
2
pad of 2 oz copper.
Symbol
R
th,j-c
R
th,j-a
Value
25
50
Unit
°C/W
°C/W
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
*I
D(ON)
*R
DS(ON)
Dynamic
Qg (V
GS
=10V)
*1, 2
Qg (V
GS
=5V)
*1, 2
Qgs
*1, 2
Qgd
*1, 2
Ciss
Coss
Crss
Rg
MTB20N03Q8
Min.
30
1.0
-
-
-
-
8
-
-
-
-
-
-
-
-
-
-
Typ.
-
1.5
16
-
-
-
-
15.5
23
11
6
1.2
3.3
1115
116
82
2
Max.
-
3.0
-
±
100
1
25
-
20
31
-
-
-
-
-
-
-
Unit
V
V
S
nA
μA
μA
A
m
Ω
m
Ω
Test Conditions
V
GS
=0, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=8A
V
GS
=
±
20
V
DS
=24V, V
GS
=0
V
DS
=20V, V
GS
=0, Tj=125°C
V
DS
=10V, V
GS
=10V
V
GS
=10V, I
D
=8A
V
GS
=5V, I
D
=6A
nC
I
D
=8A, V
DS
=15V, V
GS
=10V
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
V
GS
=15mV, V
DS
=0V, f=1MHz
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
