CYStech Electronics Corp.
Characteristic Curves(Cont.)
Gate Charge Characteristics
10
I
D
= 8A
V
GS
- Gate-S
ource Voltage( V )
8
15V
Capacitance(pF
)
1500
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date :
Page No. : 5/6
Capacitance Characteristics
1350
1200
1050
900
750
600
450
300
150
Coss
Crss
0
5
15
10
V
DS
- Drain-S
ource Voltage( V )
20
25
30
Ciss
f = 1MHz
V
GS
= 0 V
V
DS
= 5V
10V
6
4
2
0
0
4
8
Q
g
- Gate Charge( nC )
12
16
0
Maximum S Operating Area
afe
100
R
DS(ON)
Limit
100
μ
s
10
I
D
- Drain Current( A )
10ms
100ms
1ms
S
ingle Pulse Maximum Power Dissipation
50
S
ingle Pulse
R
JA
= 125° C/ W
θ
T
A
= 25°C
P( pk ),Peak Transient Power( W )
40
30
1
1s
10s
DC
V = 10V
GS
S
ingle Pulse
R
θ
JA
= 125°C/ W
T
A
= 25°C
1
10
V
DS
- Drain-S
ource Voltage( V )
100
20
0.1
10
0.01
0.1
0
0.001
0.01
0.1
1
10
100
1000
Transient Thermal Response Curve
1
Duty Cycle = 0.5
r( t ),Normalized Effective
Transient Thermal Resistance
0.2
0.1
0.1
0.05
Notes
:
0.02
P
DM
0.01
t1
t2
0.01
S
ingle Pulse
1.Duty Cycle,D =
2.R
θ
JA
=125° C/ W
t1
t2
3.T
J
- T
A
= P * R
JA
(t)
θ
4.R
JA
(t)=r(t) + R
JA
θ
θ
0.001
10
-4
10
-3
10
-2
10
-1
1
10
100
1000
t
1
,Time (sec)
MTB20N03Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
