CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date :
Page No. : 4/6
30
V = 10V 6V
7V
GS
On-Region Characteristics
On-Resistance Variation with Drain Current and Gate Voltage
2.4
2.2
V
GS
= 3.5 V
2.0
R
DS(ON)
-Normalized
Drain-S
ource On-Resistance
4.0 V
25
I
D
- Drain Current(A)
20
5V
4.5V
1.8
1.6
1.4
1.2
1.0
0.8
0
6
15
4V
4.5 V
5.0 V
6.0 V
7.0 V
10 V
10
5
0
3.5V
0
1
2
3
V - Drain S
ource Voltage(V)
DS
4
5
12
18
I
D
- Drain Current(A)
24
30
On-Resistance Variation with Temperature
1.9
I
D
= 8A
V = 10V
GS
R
DS(on)
- Normalized
Drain-S
ource On-Resistance
0.09
0.08
R
DS(ON)
- On-Resistance(
Ω
)
0.07
0.06
0.05
0.04
0.03
0.02
On-Resistance Variation with Gate-to-S
ource Voltage
I
D
= 8 A
1.6
1.3
1.0
T
A
= 125°C
T
A
= 25°C
0.7
0.4
-50
0.01
-25
75
0
25
50
T
J
- Junction Temperature (° C)
100
125
150
2
4
8
6
V
GS
- Gate-S
ource Voltage( V )
10
30
V = 10V
DS
Transfer Characteristics
100
Body Diode Forward Voltage Variation
with S
ource Current and Temperature
V = 0V
GS
Is - Reverse Drain Current( A )
25
20
15
125°C
10
5
0
1
1.5
2.5
2.0
GS
V - Gate-S
ource Voltage( V )
3.0
3.5
T
A
= -55° C
25° C
10
T
A
= 125°C
I
D
- Drain Current(A)
1
25° C
0.1
-55° C
0.01
0.001
0
0.2
0.6
0.8
1.0
0.4
V
D
- Body Diode Forward Voltage( V )
S
1.2
1.4
MTB20N03Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
