Complementary MOSFET
AO6601 n-channel typical characteristics
ELM16601EA-S
600
500
Capacitance (pF)
400
300
200
100
0
0
5
10
15
20
25
30
Vds (Volts)
Figure 8: Capacitance Characteristics
C
iss
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
Vgs (Volts)
3
2
1
0
0
1
2
3
4
5
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
Vds=15V
Id=3.4A
C
oss
C
rss
100.0
Tj(max.)=150°C
Ta=25°C
Rds(on)
limited
20
Power (W)
Id (Amps)
10.0
10�½s
100�½s
1ms
15
Tj(max.)=150°C
Ta=25°C
10
1.0
0.1s
10ms
1s
5
10s
0.1
0.1
1
DC
10
100
0
0.001
0.01
0.1
1
10
100
1000
Vds (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
�½
ja
Normalized Transient
Thermal Resistance
D=T
on
/T
T
j,pk
=T
a
+P
dm
.Z
�½ja
.R
�½ja
R
�½ja
=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd
T
on
Single Pulse
0.0001
0.001
0.01
0.1
1
10
100
1000
T
0.01
0.00001
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
7- 4
ELM-TECH [ ELM Technology Corporation ]
