Complementary MOSFET
AO6601, AO6601L
ELM16601EA-S
P-CHANNEL:
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
-10V
-5V
■Typical Electrical and Thermal Characteristics (P-ch)
10
-4.5V
-4V
Vds=-5V
15
8
6
25°C
-Id (A)
10
-3V
-Id (A)
Vgs=-3.5V
125°C
4
2
0
5
-2.5V
-2V
0
0
1
2
3
4
5
-Vds (Volts)
Fig 1: On-Region Characteristics
250
225
200
0
0.5
1
1.5
2
2.5
3
3.5
4
-Vgs (Volts)
Figure 2: Transfer Characteristics
1.6
Normalized On-Resistance
Vgs=-2.5V
Vgs=-4.5V, Vgs=-10V
Rds(on) (m
�½
)
1.4
Vgs=-2.5V
175
150
125
100
75
50
0
1
2
3
4
5
6
Vgs=-10V
Vgs=-4.5V
1.2
Id=-2A
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
-Id (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
350
300
250
200
150
100
50
0
0
2
4
6
8
10
-Vgs (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
Id=-2A
125°C
1.0E+01
1.0E+00
1.0E-01
125°C
Rds(on) (m
�½
)
-Is (A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-Vsd (Volts)
Figure 6: Body-Diode Characteristics
25°C
Alpha and Omega Semiconductor, Ltd.
7- 6