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EBD11ED8ABFB-7B 参数 Datasheet PDF下载

EBD11ED8ABFB-7B图片预览
型号: EBD11ED8ABFB-7B
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB无缓冲DDR SDRAM DIMM EBD11ED8ABFB ( 128M的话】 72位, 2家银行) [1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words 】 72 bits, 2 Banks)]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 19 页 / 208 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EBD11ED8ABFB
DC Characteristics 1 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Operating current (ACTV-PRE)
Operating current
(ACTV-READ-PRE)
Idle power down standby current
Floating idle standby current
Quiet idle standby current
Active power down
standby current
Active standby current
Operating current
(Burst read operation)
Operating current
(Burst write operation)
Auto refresh current
Self refresh current
Operating current
(4 banks interleaving)
Symbol
IDD0
IDD1
IDD2P
IDD2F
IDD2Q
IDD3P
IDD3N
IDD4R
IDD4W
IDD5
IDD6
IDD7A
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
-6B
-7A, -7B
Grade
-6B
-7A, -7B
-6B
-7A, -7B
max.
1980
1755
2250
1980
54
720
630
450
360
1260
1080
2520
2160
2520
2160
5220
4860
72
4500
3870
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Test condition
CKE
VIH,
tRC = tRC (min.)
CKE
VIH, BL = 2,
CL = 2.5,
tRC = tRC (min.)
CKE
VIL
Notes
1, 2, 9
1, 2, 5
4
CKE
VIH, /CS
VIH,
4, 5
DQ, DQS, DM = VREF
CKE
VIH, /CS
VIH,
4, 10
DQ, DQS, DM = VREF
CKE
VIL
CKE
VIH, /CS
VIH
tRAS = tRAS (max.)
CKE
VIH, BL = 2,
CL = 2.5
CKE
VIH, BL = 2,
CL = 2.5
tRFC = tRFC (min.),
Input
VIL or
VIH
Input
VDD – 0.2 V
Input
0.2 V
BL = 4
5, 6, 7
3
3, 5, 6
1, 2, 5, 6
1, 2, 5, 6
Notes. 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. Data/Data mask transition twice per one cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
9. Command/Address transition once every two clock cycles.
10. Command/Address stable at
VIH or
VIL.
DC Characteristics 2 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Input leakage current
Output leakage current
Output high current
Output low current
Symbol
ILI
ILO
IOH
IOL
min.
–36
–10
–15.2
15.2
max.
36
10
Unit
µA
µA
mA
mA
Test condition
VDD
VIN
VSS
VDD
VOUT
VSS
VOUT = 1.95V
VOUT = 0.35V
Notes
Pin Capacitance (TA = 25°C, VDD, VDDQ = 2.5V ± 0.2V)
Parameter
Input capacitance
Input capacitance
Data and DQS input/output
capacitance
Symbol
CI1
CI2
CO
Pins
Address, /RAS, /CAS, /WE,
/CS, CKE
CK, /CK
DQ, DQS, CB
max.
TBD
TBD
TBD
Unit
pF
pF
pF
Notes
Preliminary Data Sheet E0295E20 (Ver. 2.0)
11