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EDD2532DGBH-7FTT-F 参数 Datasheet PDF下载

EDD2532DGBH-7FTT-F图片预览
型号: EDD2532DGBH-7FTT-F
PDF下载: 下载PDF文件 查看货源
内容描述: 256M DDR位移动RAM ™ WTR (宽温度范围) [256M bits DDR Mobile RAM™ WTR (Wide Temperature Range)]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 57 页 / 739 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD2532DGBH-TT  
Pin Function  
CK, /CK (input pins)  
The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs and DQs are referred to the cross  
point of the CK rising edge and the /CK falling edge. When a read operation, DQSs and DQs are referred to the  
cross point of the CK and the /CK. When a write operation, DMs and DQs are referred to the cross point of the DQS  
and the VDDQ/2 level. DQSs for write operation are referred to the cross point of the CK and the /CK. The other  
input signals are referred at CK rising edge.  
/CS (input pin)  
When /CS is low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal  
operations (bank active, burst operations, etc.) are held.  
/RAS, /CAS, and /WE (input pins)  
These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels.  
See "Command operation".  
A0 to A11 (input pins)  
Row address (AX0 to AX11) is determined by the A0 to the A11 level at the cross point of the CK rising edge and the  
/CK falling edge in a bank active command cycle. Column address is loaded via the A0 to the A8 at the cross point  
of the CK rising edge and the /CK falling edge in a read or a write command cycle (See “Address Pins Table”). This  
column address becomes the starting address of a burst operation.  
[Address Pins Table]  
Address (A0 to A11)  
Organization  
Part number  
Page size  
2KB  
Row address  
AX0 to AX11  
Column address  
AY0 to AY8  
EDD2532DGBH  
× 32 bits  
A10 (AP) (input pin)  
A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If  
A10 = high when a precharge command is issued, all banks are precharged. If A10 = low when a precharge  
command is issued, only the bank that is selected by BA1/BA0 is precharged. If A10 = high when read or write  
command, auto precharge function is enabled.  
BA0 and BA1 (input pins)  
BA0 and BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3.  
(See Bank Select Signal Table)  
[Bank Select Signal Table]  
BA0  
L
BA1  
L
Bank 0  
Bank 1  
H
L
Bank 2  
L
H
Bank 3  
H
H
Remark: H: VIH. L: VIL.  
Preliminary Data Sheet E1201E20 (Ver. 2.0)  
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