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EDD2532DGBH-7FTT-F 参数 Datasheet PDF下载

EDD2532DGBH-7FTT-F图片预览
型号: EDD2532DGBH-7FTT-F
PDF下载: 下载PDF文件 查看货源
内容描述: 256M DDR位移动RAM ™ WTR (宽温度范围) [256M bits DDR Mobile RAM™ WTR (Wide Temperature Range)]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 57 页 / 739 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDD2532DGBH-TT  
CKE (input pin)  
CKE controls power-down mode, self-refresh function with other command inputs.  
The CKE level must be kept for 1 clock at least, that is, if CKE changes at the cross point of the CK rising edge and  
the /CK falling edge with proper setup time tIS, by the next CK rising edge CKE level must be kept with proper hold  
time tIH.  
DQ0 to DQ31 (input/output pins)  
Data are input to and output from these pins.  
DQS0 to DQS3 (input and output pin): DQS provides the read data strobes (as output) and the write data strobes  
(as input). Each DQS pin corresponds to eight DQ pins, respectively (See DQS and DM Correspondence Table).  
DM0 to DM3 (input pin)  
DM is the reference signals of the data input mask function. DM is sampled at the cross point of DQS and VDDQ/2.  
When DM = high, the data input at the same timing are masked while the internal burst counter will be counting up.  
Each DM pin corresponds to eight DQ pins, respectively (See DQS and DM Correspondence Table).  
[DQS and DM Correspondence Table]  
Part number  
Organization  
DQS  
Data mask  
DM0  
DQs  
EDD2532DGBH  
× 32 bits  
DQS0  
DQS1  
DQS2  
DQS3  
DQ0 to DQ7  
DQ8 to DQ15  
DQ16 to DQ23  
DQ24 to DQ31  
DM1  
DM2  
DM3  
VDD, VSS, VDDQ, VSSQ (Power supply)  
VDD and VSS are power supply pins for internal circuits. VDDQ and VSSQ are power supply pins for the output  
buffers. VDD must be equal to VDDQ.  
Preliminary Data Sheet E1201E20 (Ver. 2.0)  
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