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EDE1108ACBG-5C-E 参数 Datasheet PDF下载

EDE1108ACBG-5C-E图片预览
型号: EDE1108ACBG-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 82 页 / 778 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE1104ACBG, EDE1108ACBG, EDE1116ACBG
Recommended DC Operating Conditions (SSTL_18)
Parameter
Supply voltage
Supply voltage for output
Input reference voltage
Termination voltage
DC input logic high
DC input low
AC input logic high
-8E, -6E
-5C
AC input low
-8E, -6E
-5C
Symbol
VDD
VDDQ
VREF
VTT
VIH (DC)
VIL (DC)
VIH (AC)
VIH (AC)
VIL (AC)
VIL (AC)
min.
1.7
1.7
0.49
×
VDDQ
VREF
0.04
VREF + 0.125
−0.3
VREF
+
0.200
VREF + 0.250
typ.
1.8
1.8
max.
1.9
1.9
Unit
V
V
V
V
V
V
V
V
V
V
Notes
4
4
1, 2
3
0.50
×
VDDQ 0.51
×
VDDQ
VREF
VREF + 0.04
VDDQ + 0.3
VREF – 0.125
VREF – 0.200
VREF
0.250
Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically
the value of VREF is expected to be about 0.5
×
VDDQ of the transmitting device and VREF are expected
to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed
±2%
VREF (DC).
3. VTT of transmitting device must track VREF of receiving device.
4. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and
VDDL tied together.
Data Sheet E1173E40 (Ver. 4.0)
6