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EDE1108ACBG-5C-E 参数 Datasheet PDF下载

EDE1108ACBG-5C-E图片预览
型号: EDE1108ACBG-5C-E
PDF下载: 下载PDF文件 查看货源
内容描述: 1G位DDR2 SDRAM [1G bits DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 82 页 / 778 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE1104ACBG, EDE1108ACBG, EDE1116ACBG
DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V
±
0.1V)
max.
Parameter
Symbol
Grade
-8E
-6E
-5C
×
4
85
80
75
×
8
85
80
75
×
16
110
100
90
Unit
Test condition
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks idle;
tCK = tCK (IDD);
CKE is L;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are
SWITCHING;
Data bus inputs are SWITCHING
all banks open;
Fast PDN Exit
tCK = tCK (IDD);
MRS (12) = 0
CKE is L;
Other control and
address bus inputs are
Slow PDN Exit
STABLE;
MRS (12) = 1
Data bus inputs are
FLOATING
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP
(IDD);
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are
SWITCHING;
Data bus inputs are SWITCHING
all banks open, continuous burst reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Operating current
(ACT-PRE)
IDD0
mA
Operating current
(ACT-READ-PRE)
IDD1
-8E
-6E
-5C
100
95
90
100
95
90
130
120
110
mA
Precharge power-
IDD2P
down standby current
-8E
-6E
-5C
10
10
10
10
10
10
10
10
10
mA
Precharge quiet
standby current
IDD2Q
-8E
-6E
-5C
35
30
25
35
30
25
35
30
25
mA
Idle standby current
IDD2N
-8E
-6E
-5C
40
35
30
35
35
30
20
20
20
40
35
30
35
35
30
20
20
20
40
35
30
35
35
30
20
20
20
mA
-8E
IDD3P-F -6E
-5C
Active power-down
standby current
-8E
IDD3P-S -6E
-5C
mA
mA
Active standby current IDD3N
-8E
-6E
-5C
90
80
65
90
80
65
90
80
65
mA
Operating current
IDD4R
(Burst read operating)
-8E
-6E
-5C
160
140
120
160
140
120
200
175
150
mA
Operating current
IDD4W
(Burst write operating)
-8E
-6E
-5C
160
140
120
160
140
120
200
175
150
mA
Data Sheet E1173E40 (Ver. 4.0)
8