EDE5132AABG
Electrical Specifications
•
All voltages are referenced to VSS (GND)
•
Execute power-up and Initialization sequence before proper device operation is achieved.
Absolute Maximum Ratings
Parameter
Power supply voltage
Power supply voltage for output
Input voltage
Output voltage
Storage temperature
Power dissipation
Short circuit output current
Symbol
VDD
VDDQ
VIN
VOUT
Tstg
PD
IOUT
Rating
−1.0
to +2.3
−0.5
to +2.3
−0.5
to +2.3
−0.5
to +2.3
−55
to +100
1.0
50
Unit
V
V
V
V
°C
W
mA
Notes
1
1
1
1
1, 2
1
1
Notes: 1. Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage temperature is the case surface temperature on the center/top side of the DRAM.
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Operating Temperature Condition
Parameter
Operating case temperature
Symbol
TC
Rating
0 to +95
Unit
°C
Notes
1, 2
Notes: 1. Operating temperature is the case surface temperature on the center/top side of the DRAM.
2. Supporting 0°C to +85°C with full AC and DC specifications.
Supporting 0°C to +85°C and being able to extend to +95°C with doubling auto-refresh commands in
frequency to a 32ms period (tREFI = 3.9µs) and higher temperature Self-Refresh entry via A7 "1" on
EMRS (2).
Preliminary Data Sheet E1115E40 (Ver. 4.0)
5
ELPIDA [ ELPIDA MEMORY ]
