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EDE5132AABG-6E-F 参数 Datasheet PDF下载

EDE5132AABG-6E-F图片预览
型号: EDE5132AABG-6E-F
PDF下载: 下载PDF文件 查看货源
内容描述: 512M位DDR2 SDRAM [512M bits DDR2 SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率
文件页数/大小: 74 页 / 700 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDE5132AABG
DC Characteristics 1 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V
±
0.1V)
×32
Parameter
Symbol
Grade
max.
Unit
Test condition
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks idle; tCK = tCK (IDD); CKE is L;
Other control and address bus inputs are
STABLE;
Data bus inputs are FLOATING
all banks idle; tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are
STABLE;
Data bus inputs are FLOATING
all banks idle; tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are
SWITCHING;
Data bus inputs are SWITCHING
all banks open;
tCK = tCK (IDD);
Fast PDN Exit
CKE is L;
MRS(12) = 0
Other control and
address bus inputs
are STABLE;
Slow PDN Exit
Data bus inputs are
MRS(12) = 1
FLOATING
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD),
tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are
SWITCHING;
Data bus inputs are SWITCHING
all banks open, continuous burst reads,
IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD),
tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD),
tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Operating current
(ACT-PRE)
IDD0
-8E
-6E
85
75
mA
Operating current
(ACT-READ-PRE)
IDD1
-8E
-6E
100
90
mA
Precharge power-down
standby current
IDD2P
-8E
-6E
10
10
mA
Precharge quiet standby
current
IDD2Q
-8E
-6E
15
15
mA
Idle standby current
IDD2N
-8E
-6E
20
20
mA
IDD3P-F
Active power-down standby
current
IDD3P-S
-8E
-6E
50
45
mA
-8E
-6E
30
30
mA
Active standby current
IDD3N
-8E
-6E
65
60
mA
Operating current (Burst
read operating)
IDD4R
-8E
-6E
210
190
mA
Operating current (Burst
write operating)
IDD4W
-8E
-6E
240
220
mA
Preliminary Data Sheet E1115E40 (Ver. 4.0)
8