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EDL5132CBMA-10-E 参数 Datasheet PDF下载

EDL5132CBMA-10-E图片预览
型号: EDL5132CBMA-10-E
PDF下载: 下载PDF文件 查看货源
内容描述: 512M位的移动RAM MCP 2个256Mb的组件( 16M字× 32位) [512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)]
分类和应用:
文件页数/大小: 62 页 / 559 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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EDL5132CBMA
Electrical Specifications
All voltages are referenced to VSS (GND).
After power up, wait more than 200
µs
and then, execute Power on sequence and two Auto Refresh before proper
device operation is achieved.
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit output current
Power dissipation
Operating ambient temperature
Storage temperature
Symbol
VT
VDD, VDDQ
IOS
PD
TA
Tstg
Rating
–0.5 to +2.6
–0.5 to +2.6
50
1.0
–25 to +85
–55 to +125
Unit
V
V
mA
W
°C
°C
Note
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (TA = –25 to +85°C)
°
Parameter
Supply voltage
Symbol
VDD
VSS, VSSQ
DQ Supply voltage
Input high voltage
Input low voltage
VDDQ
VIH
VIL
min.
1.7
0
1.7
0.8
×
VDDQ
–0.3
typ.
1.8
0
1.8
max.
1.95
0
1.95
VDDQ + 0.3
0.3
Unit
V
V
V
V
V
1
2
Notes
Notes: 1. VIH (max.) = 2.6V (pulse width
5ns)
2. VIL (min.) = –1.0V (pulse width
5ns)
Preliminary Data Sheet E0490E30 (Ver. 3.0)
4