HM5117805 Series
DC Characteristics
(Ta = 0 to +70°C, V
CC
= 5 V ± 10%, V
SS
= 0 V)
HM5117805
-5
Symbol
I
CC1
I
CC2
-6
-7
Test conditions
t
RC
= min
TTL interface
RAS, CAS
= V
IH
Dout = High-Z
CMOS interface
RAS, CAS
≥
V
CC
– 0.2 V
Dout = High-Z
CMOS interface
RAS, CAS
≥
V
CC
– 0.2 V
Dout = High-Z
t
RC
= min
RAS
= V
IH
CAS
= V
IL
Dout = enable
t
RC
= min
t
HPC
= min
CMOS interface
Dout = High-Z
CBR refresh:
t
RC
= 62.5 µs
t
RAS
≤
0.3 µs
CMOS interface
RAS, CAS
≤
0.2V
Dout = High-Z
0 V
≤
Vin
≤
7 V
0 V
≤
Vout
≤
7 V
Dout = disable
High Iout = –2 mA
Low Iout = 2 mA
EO
Parameter
Standby current
Standby current
(L-version)
Standby current*
1
EDO page mode
current*
1,
*
3
Output high voltage
Output low voltage
6
Min Max Min Max Min Max Unit
—
—
110 —
2
—
100 —
2
—
90
2
mA
mA
Operating current*
1,
*
2
RAS-only
refresh current*
2
CAS-before-RAS
refresh
current
Battery backup current*
4
(Standby with CBR refresh)
(L-version)
Self refresh mode current
(L-version)
Input leakage current
Output leakage current
Notes: 1. I
CC
depends on output load condition when the device is selected. I
CC
max is specified at the output
open condition.
2. Address can be changed once or less while
RAS
= V
IL
.
3. Address can be changed once or less while
CAS
= V
IH
.
4.
CAS
= L (≤ 0.2 V) while
RAS
= L (≤ 0.2 V).
LP
—
I
CC2
—
I
CC3
I
CC5
—
—
I
CC6
I
CC7
I
CC10
—
—
—
I
CC11
—
I
LI
I
LO
V
OH
V
OL
2.4
0
1
—
1
—
1
mA
150 —
150 —
150 µA
110 —
5
—
100 —
5
—
90
5
mA
mA
110 —
100 —
500 —
100 —
90
—
90
85
mA
mA
–10 10
–10 10
Data Sheet E0156H10
ro
300 —
–10 10
–10 10
V
CC
2.4
0.4
0
0.4
500 —
500 µA
300 —
V
CC
2.4
0
du
300 µA
–10 10
–10 10
µA
µA
V
CC
0.4
V
V
ct
ELPIDA [ ELPIDA MEMORY ]
