HM5117805 Series
Write Cycle
EO
Parameter
Data-in setup time
Data-in hold time
Parameter
HM5117805
-5
Symbol
t
WCS
t
WCH
t
WP
t
RWL
t
CWL
t
DS
Min
0
7
7
7
7
0
7
Max
—
—
—
—
—
—
—
-6
Min
0
10
10
10
10
0
10
Max
—
—
—
—
—
—
—
-7
Min
0
13
10
13
13
0
13
Max
—
—
—
—
—
—
—
Unit
ns
ns
ns
ns
ns
ns
ns
15
15
Notes
14
Write command setup time
Write command hold time
Write command pulse width
Write command to
RAS
lead time
Write command to
CAS
lead time
Read-Modify-Write Cycle
Read-modify-write cycle time
RAS
to
WE
delay time
CAS
to
WE
delay time
Column address to
WE
delay time
OE
hold time from
WE
LP
t
DH
Symbol
t
RWC
t
RWD
t
CWD
t
AWD
t
OEH
Symbol
t
WRH
t
RPC
HM5117805
-5
Min
Max
-6
Min
135
79
34
49
15
Max
—
—
—
—
—
-7
Min
161
92
40
57
18
Max
—
—
—
—
—
Unit
ns
ns
ns
ns
ns
14
14
14
Notes
ro
111
67
30
42
13
—
—
—
—
—
HM5117805
-5
Min
5
7
0
7
5
Max
—
—
—
—
—
du
-6
-7
Min
Max
Min
5
—
5
10
—
10
0
10
5
—
—
—
0
10
5
Refresh Cycle
Parameter
Max
—
—
—
Unit
ns
ns
ns
Notes
CAS
setup time (CBR refresh cycle) t
CSR
CAS
hold time (CBR refresh cycle) t
CHR
WE
setup time (CBR refresh cycle) t
WRP
WE
hold time (CBR refresh cycle)
RAS
precharge to
CAS
hold time
ct
—
ns
—
ns
Data Sheet E0156H10
10
ELPIDA [ ELPIDA MEMORY ]
