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HM5117805TS-6 参数 Datasheet PDF下载

HM5117805TS-6图片预览
型号: HM5117805TS-6
PDF下载: 下载PDF文件 查看货源
内容描述: 16M的EDO DRAM (2- Mword ×8位)的2千刷新 [16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh]
分类和应用: 动态存储器
文件页数/大小: 32 页 / 539 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM5117805 Series
EO
Parameter
Capacitance
(Ta = 25°C, V
CC
= 5 V ± 10%)
Symbol
C
I1
C
I2
C
I/O
Typ
Max
5
7
7
Unit
pF
pF
pF
Notes
1
1
1, 2
Input capacitance (Address)
Input capacitance (Clocks)
Output capacitance (Data-in, Data-out)
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2.
CAS
= V
IH
to disable Dout.
AC Characteristics
(Ta = 0 to +70°C, V
CC
= 5 V ±10%, V
SS
= 0 V)
*1, *2, *18
Test Conditions
Input rise and fall time: 2 ns
Input levels: V
IL
= 0 V, V
IH
= 3 V
Input timing reference levels: 0.8 V, 2.4 V
Output timing reference levels: 0.8 V, 2.0 V
Output load: 1 TTL gate + C
L
(100 pF) (Including scope and jig)
LP
Data Sheet E0156H10
7
ro
du
ct