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HM5164805FTT-5 参数 Datasheet PDF下载

HM5164805FTT-5图片预览
型号: HM5164805FTT-5
PDF下载: 下载PDF文件 查看货源
内容描述: 64男EDO DRAM ( 8 Mword × 8位)为8K刷新/ 4K的刷新 [64 M EDO DRAM (8-Mword × 8-bit) 8 k Refresh/4 k Refresh]
分类和应用: 动态存储器
文件页数/大小: 34 页 / 220 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM5164805F Series, HM5165805F Series
Self Refresh Mode
(L-version)
EO
Parameter
RAS
pulse width (self refresh)
CAS
hold time (self refresh)
RAS
precharge time (self refresh)
HM5164805FL/HM5165805FL
-5
Symbol
t
RASS
t
RPS
t
CHS
Min
100
90
–50
Max
-6
Min
100
110
–50
Max
Unit
µs
ns
ns
Notes
25
25
Notes: 1. AC measurements assume t
T
= 2 ns.
2. An initial pause of 200 µs is required after power up followed by a minimum of eight initialization
cycles (any combination of cycles containing
RAS-only
refresh or
CAS-before-RAS
refresh).
3. Operation with the t
RCD
(max) limit insures that t
RAC
(max) can be met, t
RCD
(max) is specified as a
reference point only; if t
RCD
is greater than the specified t
RCD
(max) limit, than the access time is
controlled exclusively by t
CAC
.
4. Operation with the t
RAD
(max) limit insures that t
RAC
(max) can be met, t
RAD
(max) is specified as a
reference point only; if t
RAD
is greater than the specified t
RAD
(max) limit, then access time is
controlled exclusively by t
AA
.
5. Either t
OED
or t
CDD
must be satisfied.
6. Either t
DZO
or t
DZC
must be satisfied.
7. V
IH
(min) and V
IL
(max) are reference levels for measuring timing of input signals. Also, transition
times are measured between V
IH
(min) and V
IL
(max).
8. Assumes that t
RCD
t
RCD
(max) and t
RAD
t
RAD
(max). If t
RCD
or t
RAD
is greater than the maximum
recommended value shown in this table, t
RAC
exceeds the value shown.
9. Measured with a load circuit equivalent to 1 TTL loads and 100 pF.
10. Assumes that t
RCD
t
RCD
(max) and t
RCD
+ t
CAC
(max)
t
RAD
+ t
AA
(max).
11. Assumes that t
RAD
t
RAD
(max) and t
RCD
+ t
CAC
(max)
t
RAD
+ t
AA
(max).
12. Either t
RCH
or t
RRH
must be satisfied for a read cycles.
13. t
OFF
(max), t
OEZ
(max), t
WEZ
(max) and t
OFR
(max) define the time at which the outputs achieve the
open circuit condition and are not referred to output voltage levels.
14. t
WCS
, t
RWD
, t
CWD
, t
AWD
and t
CPW
are not restrictive operating parameters. They are included in the data
sheet as electrical characteristics only; if t
WCS
t
WCS
(min), the cycle is an early write cycle and the
data out pin will remain open circuit (high impedance) throughout the entire cycle; if t
RWD
t
RWD
(min),
t
CWD
t
CWD
(min), and t
AWD
t
AWD
(min), or t
CWD
t
CWD
(min), t
AWD
t
AWD
(min) and t
CPW
t
CPW
(min), the
cycle is a read-modify-write and the data output will contain data read from the selected cell; if
neither of the above sets of conditions is satisfied, the condition of the data out (at access time) is
indeterminate.
15. t
DS
and t
DH
are referred to
CAS
leading edge in early write cycles and to
WE
leading edge in delayed
write or read-modify-write cycles.
16. t
RASP
defines
RAS
pulse width in EDO page mode cycles.
17. Access time is determined by the longest among t
AA
, t
CAC
and t
CPA
.
18. In delayed write or read-modify-write cycles,
OE
must disable output buffer prior to applying data
to the device.
19. When output buffers are enabled once, sustain the low impedance state until valid data is
obtained. When output buffer is turned on and off within a very short time, generally it causes large
V
CC
/V
SS
line noise, which causes to degrade V
IH
min/V
IL
max level.
L
Data Sheet E0098H10
15
o
Pr
du
ct