HM5164805F Series, HM5165805F Series
AC Characteristics
(Ta = 0 to +70˚C, V
CC
= 3.3 V ± 0.3 V, V
SS
= 0 V) *
1,
*
2,
*
19
EO
Test Conditions
•
•
•
•
•
Input rise and fall time: 2 ns
Parameter
Random read or write cycle time
RAS
precharge time
CAS
precharge time
RAS
pulse width
CAS
pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS
to
CAS
delay time
RAS
hold time
CAS
hold time
CAS
to
RAS
precharge time
OE
to Din delay time
OE
delay time from Din
CAS
delay time from Din
Transition time (rise and fall)
Input pulse levels: V
IL
= 0 V, V
IH
= 3.0 V
Input timing reference levels: 0.8 V, 2.0 V
Output timing reference levels: 0.8 V, 2.0 V
Output load: 1 TTL gate + C
L
(100 pF) (Including scope and jig)
Read, Write, Read-Modify-Write and Refresh Cycles
(Common parameters)
RAS
to column address delay time
L
Symbol
t
RC
t
RP
t
CP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
OED
t
DZO
t
DZC
t
T
HM5164805F/HM5165805F
-5
Min
84
30
8
Max
—
—
—
-6
Min
104
40
10
Max
—
—
—
10000
10000
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
3
4
Notes
Data Sheet E0098H10
11
o
Pr
50
8
0
8
0
8
10000
10000
—
—
—
—
60
10
0
10
0
10
14
12
15
40
5
12
10
13
38
5
13
0
0
2
37
25
—
—
—
—
—
—
50
15
0
0
2
—
—
—
—
45
30
du
—
—
—
—
—
—
5
6
6
50
ns
7
ct
ELPIDA [ ELPIDA MEMORY ]
