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HM5164805FTT-5 参数 Datasheet PDF下载

HM5164805FTT-5图片预览
型号: HM5164805FTT-5
PDF下载: 下载PDF文件 查看货源
内容描述: 64男EDO DRAM ( 8 Mword × 8位)为8K刷新/ 4K的刷新 [64 M EDO DRAM (8-Mword × 8-bit) 8 k Refresh/4 k Refresh]
分类和应用: 动态存储器
文件页数/大小: 34 页 / 220 K
品牌: ELPIDA [ ELPIDA MEMORY ]
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HM5164805F Series, HM5165805F Series
Operation Table
EO
RAS
H
L
L
L
L
L
CAS
WE
×
×
L
L
L
L
H
L*
2
L*
2
×
H to L
H
L
H to L
L
H
L
H
OE
×
L
×
H
L to H
×
×
H
I/O 0 to I/O 7
High-Z
Dout
Din
Din
Dout/Din
High-Z
High-Z
High-Z
Operation
Standby
Read cycle
Early write cycle
Delayed write cycle
Read-modify-write cycle
RAS-only
refresh cycle
CAS-before-RAS
refresh cycle or
Self refresh cycle (L-version)
Read cycle (Output disabled)
Notes: 1. H: V
IH
(inactive), L: V
IL
(active),
×:
V
IH
or V
IL
2. t
WCS
0 ns: Early write cycle
t
WCS
< 0 ns: Delayed write cycle
Absolute Maximum Ratings
Parameter
Terminal voltage on any pin relative to V
SS
Power supply voltage relative to V
SS
Short circuit output current
Power dissipation
Storage temperature
DC Operating Conditions
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high voltage
Input low voltage
Ambient temperature range
V
IH
V
IL
Ta
Min
3.0
0
2.0
–0.3
0
Notes: 1. All voltage referred to V
SS
.
2. The supply voltage with all V
CC
pins must be on the same level. The supply voltage with all V
SS
pins
must be on the same level.
L
V
T
P
T
Data Sheet E0098H10
7
o
Pr
Symbol
Value
V
CC
–0.5 to +4.6
50
Iout
1.0
Tstg
–55 to +125
Typ
3.3
0
0
70
Unit
V
V
mA
W
°C
–0.5 to V
CC
+ 0.5 (≤ 4.6 V (max))
du
Max
Unit
3.6
V
V
V
CC
+ 0.3
0.8
V
V
˚C
Notes
1, 2
2
1
1
ct