HM5164805F Series, HM5165805F Series
DC Characteristics
(HM5165805F Series)
EO
Parameter
Operating current*
1,
*
2
Standby current
Standby current
(L-version)
RAS-only
refresh current*
2
Standby current*
1
CAS-before-RAS
refresh
current
EDO page mode current*
1,
*
3
Battery backup current*
4
(Standby with CBR refresh)
(L-version)
Self refresh mode current
(L-version)
Input leakage current
Output leakage current
Output high voltage
Output low voltage
I
LI
HM5165805F
-5
Max
135
2
-6
Min
—
—
Max
115
2
Unit
mA
mA
Test conditions
t
RC
= min
TTL interface
RAS, CAS
= V
IH
Dout = High-Z
CMOS interface
RAS, CAS
≥
V
CC
– 0.2 V
Dout = High-Z
CMOS interface
RAS, CAS
≥
V
CC
– 0.2 V
Dout = High-Z
t
RC
= min
RAS
= V
IH
,
CAS
= V
IL
Dout = enable
t
RC
= min
RAS
= V
IL
,
CAS
cycle,
t
HPC
= t
HPC
min
CMOS interface
Dout = High-Z
CBR refresh: t
RC
= 15.6 µs
t
RAS
≤
0.3 µs
CMOS interface
RAS, CAS
≤
0.2 V
Dout = High-Z
0 V
≤
Vin
≤
V
CC
+ 0.3 V
0 V
≤
Vout
≤
V
CC
Dout = disable
Symbol Min
I
CC1
—
—
I
CC2
—
0.5
—
0.5
mA
Notes: 1. I
CC
depends on output load condition when the device is selected. I
CC
max is specified at the output
open condition.
2. Address can be changed once or less while
RAS
= V
IL
.
3. Measured with one sequential address change per EDO cycle, t
HPC
.
4. V
IH
≥
V
CC
– 0.2 V, 0 V
≤
V
IL
≤
0.2 V.
L
I
CC2
—
I
CC3
I
CC5
I
CC6
I
CC7
I
CC10
—
—
—
—
—
I
CC11
—
–5
–5
2.4
0
I
LO
V
OH
V
OL
300
—
300
µA
135
5
135
110
1.2
—
—
—
—
—
115
5
115
100
1.2
mA
mA
mA
mA
mA
Data Sheet E0098H10
9
o
Pr
500
—
500
µA
5
5
V
CC
0.4
–5
–5
2.4
0
5
5
µA
µA
V
CC
0.4
V
V
du
High Iout = –2 mA
Low Iout = 2 mA
ct
ELPIDA [ ELPIDA MEMORY ]
