EM39LV800
8M Bits (512Kx16) Flash Memory
SPECIFICATION
Operating Range
Model Name
EM39LV800
Ambient Temperature
0°C to +70°C
V
DD
2.7~3.6V
Table 7:
Operating Range
AC Conditions of Test
Input Rise/Fall Time ..................................................................... 5ns
Output Load ................................................................................. CL=30pF for 55Rns
Output Load ................................................................................. CL=100pF for 70ns/90ns
See Figures 14 and 15
DC CHARACTERISTICS (CMOS Compatible)
Parameter
Description
Power Supply Current
I
DD
Read
Program and Erase
I
SB
I
LI
I
LO
V
IL
V
IH
V
IHC
V
OL
V
OH
Standby V
DD
Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
Test Conditions
Address Input =V
IL
/V
IH
, at f=1/T
RC
Min,
V
DD
=V
DD
Max
CE#=OE#=V
IL
, WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
,
CE#=V
IHC
, V
DD
=V
DD
Max
V
IN
=GND to V
DD,
V
DD
=V
DD
Max
V
OUT
=GND to V
DD,
V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
V
DD
=V
DD
Max
I
OL
=100µA, V
DD
=V
DD
Min
I
OH
=-100µA, V
DD
=V
DD
Min
Min
Max
Unit
30
30
20
1
10
0.8
0.7 V
DD
V
DD
-0.3
0.2
V
DD
-0.2
mA
mA
µA
µA
µA
V
V
V
V
V
Table 8:
DC Characteristics (Cmos Compatible)
Recommended System Power-up Timing
Parameter
T
PU-READ
*
T
PU-WRITE
*
Description
Power-up to Read Operation
Power-up to Program/Erase Operation
Min
100
100
Unit
µs
µs
*
This parameter is measured only for initial qualification and after a design or process change that
could affect this parameter.
Table 9:
Recommended System Power-up Timing
This specification is subject to change without further notice. (04.09.2004 V1.0)
Page 11 of
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EMC [ ELAN MICROELECTRONICS CORP ]
