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EM39LV80090H 参数 Datasheet PDF下载

EM39LV80090H图片预览
型号: EM39LV80090H
PDF下载: 下载PDF文件 查看货源
内容描述: 8M位( 512Kx16 )闪存 [8M Bits (512Kx16) Flash Memory]
分类和应用: 闪存
文件页数/大小: 25 页 / 295 K
品牌: EMC [ ELAN MICROELECTRONICS CORP ]
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EM39LV800
8M Bits (512Kx16) Flash Memory
SPECIFICATION
Capacitance (Ta=25°C, f=1Mhz, other pins open)
Parameter
C
I/O
*
C
IN
*
Description
I/O Pin Capacitance
Input Capacitance
Test Conditons
V
I/O
=0V
V
IN
=0V
Max
12pF
6pF
*
This parameter is measured only for initial qualification and after a design or process change that
could affect this parameter.
Table 10:
Capacitance (Ta=25
°
C, f=1Mhz, Other Pins Open)
Reliability Characteristics
Symbol
N
END
*
T
DR
*
I
LTH
*
Parameter
Endurance
Data Retention
Latch Up
Min Specification
10,000
10
100+I
DD
Unit
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
*
This parameter is measured only for initial qualification and after a design or process change that
could affect this parameter.
Table 11:
Reliability Characteristics
AC Characteristics
Read Cycle Timing Parameters
Symbol
T
RC
T
CE
T
AA
T
OE
T
CLZ
*
T
OLZ
*
T
CHZ
*
T
OHZ
*
T
OH
*
Parameter
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address
Change
55REC
Min
55
55
55
30
0
0
15
15
0
70REC
Min
70
70
70
35
0
0
20
20
0
90REC
Min
90
90
90
45
0
0
30
30
0
Max
Max
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
*
This parameter is measured only for initial qualification and after a design or process change that
could affect this parameter.
Table 12a:
Read Cycle Timing Parameters
This specification is subject to change without further notice. (04.09.2004 V1.0)
Page 12 of
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