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EM39LV80090H 参数 Datasheet PDF下载

EM39LV80090H图片预览
型号: EM39LV80090H
PDF下载: 下载PDF文件 查看货源
内容描述: 8M位( 512Kx16 )闪存 [8M Bits (512Kx16) Flash Memory]
分类和应用: 闪存
文件页数/大小: 25 页 / 295 K
品牌: EMC [ ELAN MICROELECTRONICS CORP ]
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EM39LV800
8M Bits (512Kx16) Flash Memory
SPECIFICATION
CFI Query Identification String*
Address
10H
11H
12H
13H
14H
15H
16H
17H
18H
19H
1AH
Data
0051H
0052H
0059H
0001H
0007H
0000H
0000H
0000H
0000H
0000H
0000H
Primary OEM command set
Data
Query Unique ASCII string “QRY”
Address for Primary Extend Table
Alternate OEM command set (00H=none exists)
Address for Alternate OEM extended Table (00H=none exists)
*
Refer to CFI publication 100 for more details.
Table 4:
CFI Query Identification String1
System Interface
Address
1BH
1CH
1DH
1EH
1FH
20H
21H
22H
23H
24H
25H
26H
Data
0027H
0036H
0000H
0000H
0004H
0000H
0004H
0006H
0001H
0000H
0001H
0001H
V
DD
Min (Program/Erase)
Data
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
V
DD
Max (Program/Erase)
DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts
V
PP
min (00H=no V
PP
pin)
V
PP
max (00H=no V
PP
pin)
Typical time out for Word-Program 2
µs
(2 =16µs)
Typical time out for min size buffer program 2
N
µs
(00H=not supported)
Typical time out for individual Sector/Block-Erase 2
N
ms (2
4
=16ms)
Typical time out for Chip-Erase 2 ms (2 =64ms)
Maximum time out for Word-Program 2 times typical (2 x2 =32µs)
Maximum time out for buffer Program 2
N
times typical
Maximum time out for individual Sector/Block-Erase 2 times typical
(2
1
x2
4
=32ms)
Maximum time out for Chip-Erase 2 times typical (2 x2 =128ms)
N
1
6
N
N
1
4
N
6
N
4
Table 5:
System Interface
This specification is subject to change without further notice. (04.09.2004 V1.0)
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