欢迎访问ic37.com |
会员登录 免费注册
发布采购

EM621V8CW-12S 参数 Datasheet PDF下载

EM621V8CW-12S图片预览
型号: EM621V8CW-12S
PDF下载: 下载PDF文件 查看货源
内容描述: 64K X16位超低功耗和低电压全CMOS静态RAM [64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM]
分类和应用:
文件页数/大小: 11 页 / 188 K
品牌: EMLSI [ Emerging Memory & Logic Solutions Inc ]
 浏览型号EM621V8CW-12S的Datasheet PDF文件第2页浏览型号EM621V8CW-12S的Datasheet PDF文件第3页浏览型号EM621V8CW-12S的Datasheet PDF文件第4页浏览型号EM621V8CW-12S的Datasheet PDF文件第5页浏览型号EM621V8CW-12S的Datasheet PDF文件第7页浏览型号EM621V8CW-12S的Datasheet PDF文件第8页浏览型号EM621V8CW-12S的Datasheet PDF文件第9页浏览型号EM621V8CW-12S的Datasheet PDF文件第10页  
merging Memory & Logic Solutions Inc.
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1).
EM611FV16U Series
Low Power, 64Kx16 SRAM
(Address Controlled, CS=OE=V
IL
, WE=V
IH,
UB or/and LB
=
V
IL
)
t
RC
Address
t
AA
t
OH
Data Out
Previous Data Valid
Data Valid
TIMING WAVEFORM OF READ CYCLE(2)
(WE = V
IH
)
t
RC
Address
t
AA
CS
t
C O
t
B A
UB ,LB
t
O E
OE
t
OLZ
Data Out
High-Z
Data Valid
t
OH
t
HZ
t
BHZ
t
OHZ
t
BLZ
t
LZ
NOTES (READ CYCLE)
1. t
HZ
and t
OHZ
are defined as the outputs achieve the open circuit conditions and are not referanced to output voltage levels.
2. At any given temperature and voltage condition, t
HZ
(Max.) is less than t
LZ
(Min.) both for a given device and from device to device
interconnection.
6