EM620FU16B Series
Low Power, 128Kx16 SRAM
128K x16 Bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
FEATURES
The EM620FU16B series are fabricated by EMLSI’s
advanced full CMOS process technology. The families
support industrial temperature range and Chip Scale Pack-
age for user flexibility of system design. The families also
supports low data retention voltage for battery back-up
operation with low data retention current.
- Process Technology : 0.15mm Full CMOS
- Organization : 128K x16
- Power Supply Voltage
=> EM620FU16B Series: 2.7V~3.3V
- Low Data Retention Voltage : 1.5V (MIN)
- Three state output and TTL Compatible
- Packaged product designed for 45/55/70ns
- Package Type: 48-FpBGA
The EM620FU16B series are available in KGD and
JEDEC standard 48 pin 6mm x 7mm BGA package.
PRODUCT FAMILY
Power Dissipation
Product
Family
Operating
Temperature
Vcc Range
Speed
PKG Type
Standby
(ISB1, Typ.)
Operating
(ICC1.Max)
Industrial (-40 ~ 85oC)
Industrial (-40 ~ 85oC)
Industrial (-40 ~ 85oC)
45ns
55ns
70ns
EM620FU16B-45LF
EM620FU16B-55LF
EM620FU16B-70LF
2.7V~3.3V
2.7V~3.3V
2.7V~3.3V
1µA
1µA
1µA
3mA
3mA
3mA
48-FpBGA
48-FpBGA
48-FpBGA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTIO
1
2
3
4
5
6
Pre-charge Circuit
A
B
C
D
LB
OE
A0
A3
A1
A4
A6
A2
CS2
I/O8 UB
CS1 I/O0
I/O1 I/O2
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
VCC
VSS
I/O9 I/O10 A5
Memory Array
1024 x 2048
V
I/O11 DNU A7
I/O3
V
CC
SS
E
V
I/O12 DNU A16 I/O4
V
SS
CC
Data
I/O0 ~ I/O7
I/O8 ~ I/O15
Cont
F
G
H
I/O14 I/O13 A14 A15 I/O5 I/O6
I/O15 DNU A12 A13 WE I/O7
I/O Circuit
Data
Cont
Column Select
DNU A8
A9
A10 A11 DNU
A14
A15
A16
A11
A13
A10
A12
48-FpBGA: Top view (Ball down)
WE
OE
Name
Function
Name
Function
UB
Control Logic
LB
CS1, CS2
OE
Chip select inputs
Vcc
Power Supply
Ground
CS1
CS2
Output Enable input Vss
Upper Byte (I/O9~16
)
WE
Write Enable input
Address Inputs
UB
LB
Lower Byte (I/O1~8
No Connection
)
A0~A16
I/O0~I/O15 Data Inputs/Outputs NC
2
EMLSI [ Emerging Memory & Logic Solutions Inc ]
