EM640FP16 Series
Low Power, 256Kx16 SRAM
DATA RETENTION CHARACTERISTICS
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
I
Test Condition
SB1
V
for Data Retention
V
1.0
-
2.2
V
CC
DR
1)
(Chip Disabled)
V
=1.2V, I
Test Condition
CC
SB1
I
Data Retention Current
-
0.5
2
uA
ns
DR
1)
(Chip Disabled)
Chip Deselect to Data Retention Time
Operation Recovery Time
t
t
0
-
-
-
-
SDR
RDR
See data retention wave form
t
RC
NOTES
1. See the I
measurement condition of datasheet page 4.
SB1
DATA RETENTION WAVE FORM
t
t
RDR
Data Retention Mode
SDR
V
cc
1.65V
1.4V
V
DR
CS1 > Vcc-0.2V
CS
1
GND
Data Retention Mode
V
cc
1.65V
CS
2
t
t
RDR
SDR
V
DR
0.4V
CS2 < 0.2V
GND
9