R
H6006
Absolute Maximum Ratings
Parameter
Voltage V
DD
to V
SS
Voltage at any pin to V
SS
Voltage at any pin to V
DD
(except
V
IN
)
Voltage at V
IN
to V
SS
Current at any output
Storage temperature
Symbol
Conditions
V
DD
-0.3 to +8 V
V
MIN
-0.3
+0.3
V
MAX
V
INMAX
I
MAX
T
STO
+15 V
±
10 mA
-65… +150
°
C
Table 1
Unless otherwise specified, proper operation can only occur
when all terminal voltages are kept within the supply voltage
range. Unused inputs must always be tied to a defined logic
voltage level.
Operating Conditions
Symbol
Min.
Parameter
Operating temperature
Industrial
T
AI
-40
Supply voltage
V
DD
1.5
Comparator input
voltage
Version A2, A3,
V
IN
0
B2,B3
Version B1
V
IN
0
RC-oscillator
programming
(see Fig. 15)
External capacitance
C1
External resistance
R1
10
Typ Max. Units
+85
5.5
V
DD
12
Stresses above these listed maximum ratings may cause
permanent damage to the device. Exposure beyond
specified operating conditions may affect device reliability or
cause malfunction.
°
C
V
V
V
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, anti-static precautions
must be taken as for any other CMOS component.
100
nF
k
Ω
Table 2
Electrical Characteristics
V
DD
= 5.0 V, T
A
= -40 to +85
°
C, unless otherwise specified
Parameter
V
DD
activation threshold
V
DD
deactivation threshold
Supply current
Input V
IN
,,
TCL
Leakage current
Input current on pin V
IN
TCL input low level
TCL input high level
TO
,
RES
.
SAVE
Outputs
Leakage current
Symbol
V
ON
V
OFF
I
DD
I
IP
I
IN
V
IL
V
IH
I
OLK
Test Conditions
T
A
= 25
°
C
T
A
= 25
°
C
RC open, TCL= 5 V, V
IN
= 0 V
V
SS
≤
V
IP
≤
V
DD
;
T
A
= 85
°
C
Version B1; V
IN
= 10 V
Min.
3
Typ.
V
ON
- 1.5
50
Max.
3.5
140
Units
V
V
µ
A
0.005
100
2.4
1
180
0.8
µ
A
µ
A
V
V
Versions A2, A3;
V
OUT
= V
DD
Drive currents (all versions)
I
OL
V
OL
= 0.4 V
I
OL
V
DD
= 3.5 V; V
OL
= 0.4 V
I
OL
V
DD
= 1.6 V; V
OL
= 0.4 V
Drive currents
I
OH
V
OH
= 4.0 V
1)
(versions B1, B2, B3)
I
OH
V
DD
= 3.5 V; V
OH
≥
2.8 V
I
OH
V
DD
= 1.6 V; V
OH
= V
DD
-0.4
1)
Versions: An = open drain outputs; Bn = push-pull outputs
3.2
2
80
3.2
2
80
0 .05
8
1
8
µ
A
mA
mA
µ
A
mA
mA
µ
A
Table 3
V
IN
Surveillance
Voltage thresholds at T
A
= 25
°
C
Version
1)
B1
A2, B2
A3, B3
1)
2)
Comparator Reference
V
DD
V
DD
Band-gap reference
Input Resistance
R
VIN
100k
Ω
~100M
Ω
~100M
Ω
Thresholds
9.00 8.00 7.00
2)
2.25 2.00 1.75
2.00 1.95 1.90
2)
Threshold
Tolerance
±
5%
±
5%
±
10%
Ratio
Tolerance
3)
+2%
+2%
+2%
Versions: An = open drain outputs; Bn = push-pull outputs
at V
DD
= 5 V
3)
Threshold ratio as V
SH
/V
SL
or V
SL
/V
RL
Table 4
Copyright © 2004, EM Microelectronic-Marin SA
2
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