R
V6108
Absolute Maximum Ratings
Parameter
Symbol Conditions
Logic supply voltage
V
DD
-0.3V to +10V
LCD supply voltage (Note1)
V
LCD
-0.3V to +14V
Voltage at DI, CLK, STR, FR,
V
LOGIC
-0.3V to V
DD
+ 0.3V
R, DO
Voltage at S
1
to S
40
V
DISP
V
DD to
V
LCD
+ 0.3V
Storage temperature range
T
STO
-65 to 150°C
Power dissipation
P
MAX
100 mW
Maximum electrostatic
discharge to MIL-STD-883C
V
Smax
1000V
method 3015.7 with ref. to V
SS
Max. soldering conditions
T
S
250°C x 10s
Table 1
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, anti-static precautions
must be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur when
all terminal voltages are kept within the voltage range.
Unused inputs must always be tied to a defined logic
voltage level.
Operating Conditions
Parameter
Operating Temperature
(Note 1)
Logic supply voltage
LCD supply voltage
Symbol
T
A
V
DD
V
LCD
Min
-40
2.0
V
DD
Max
+125
8
12
Unit
°C
V
V
Table 2
Note 1 :
V
LCD
has to be higher or equal to V
DD
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Note 1 :
The maximum operating temperature is
confirmed by sampling at initial device qualification . In
production, all devices are tested at +85°C. On request
devices tested at +125°C can be supplied
Electrical Characteristics
Unless otherwise specified: V
DD
= 5V ± 10%, V
LCD
= 12V and T
A
=-40 to +85°C.
Parameter
Symbol
Conditions
Min
Static supply current
I
DD
See note 1
See note 1
Static supply current
I
LCD
See note 1 & 2
Dynamic supply current
I
DD
See note 1 & 3
Dynamic supply current
I
LCD
All input Signals
Low level input voltage
V
IL
High level input voltage
V
IH
3.8
Leakage input current
I
IL
V
IN
=V
SS
or V
IN
=V
DD
Data Output DO
High level output voltage
V
OH
V
DD
-100
I
H
=100µA V
DD
=V
LCD
=4.5V
Low level output voltage
V
OL
I
L
=100µA V
DD
=V
LCD
=4.5V
Driver Output S1…S40
V
SH
High level output voltage
V
LCD
-100
I
H
=20µA V
DD
=V
LCD
=4.5V
V
SL
Low level output voltage
I
L
=20µA V
DD
=V
LCD
=4.5V
Short Circuit Current
I
SC
only one output
Note 1: Tested with V
IL
= V
SS ,
V
IH
= V
DD
Note 2: Tested with f
CL
= 100kHz, F
DI
= 50kHz, 50 pF on each segment
Note 3: Tested with f
FL
= 64Hz, f
CL
= 0Hz, 50 pF on each segment
Typ
0.1
0.1
55
0.6
Max
1
1
75
5
0.8
3.5
1
Unit
µA
µA
µA
µA
V
V
µA
mV
mV
mV
mV
mA
Table 3
V
SS
+100
0.9
V
SS
+100
2
Timing Characteristics
Unless otherwise specified: V
DD
= 5V ± 10%, V
LCD
= 12V and T
A
=-40 to +85°C.
Parameter
Symbol
Conditions
Clock high pulse width
t
CH
Clock low pulse width
t
CL
t
CR
Clock and FR rise time
t
CF
Clock and FR fall time
Data input setup time
t
DS
Data input hold time
t
DH
Data output propagation
t
PD
C
LOAD
= 50pF
CLK falling to STR rising
t
P
STR falling to CLK falling
t
D
STR pulse width
t
STR
FR frequency
f
FR
t
SF
Delay S1 – S40 fall time
t
SR
Delay S1 – S40 rise time
Note 1: Recommended frame frequency
Note 2: Maximum test frequency
Copyright © 2004, EM Microelectronic-Marin SA
2
Min
500
500
Typ
Max
500
500
250
0
600
50
250
200
64 Hz (note1)
0.5
2.9
1 (note2)
1
5
800
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
mHz
µs
µs
Table 4
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