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EN25LF40_1 参数 Datasheet PDF下载

EN25LF40_1图片预览
型号: EN25LF40_1
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位串行闪存与4KB的扇区制服 [4 Megabit Serial Flash Memory with 4Kbytes Uniform Sector]
分类和应用: 闪存
文件页数/大小: 35 页 / 1378 K
品牌: EON [ EON SILICON SOLUTION INC. ]
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EN25LF40
Write Disable (WRDI) (04h)
The Write Disable instruction (Figure 6) resets the Write Enable Latch (WEL) bit in the Status Register
to a 0 or exit from OTP mode to normal mode. The Write Disable instruction is entered by driving Chip
Select (CS#) low, shifting the instruction code “04h” into the DI pin and then driving Chip Select (CS#)
high. Note that the WEL bit is automatically reset after Power-up and upon completion of the Write
Status Register, Page Program, Sector Erase, Block Erase (BE) and Chip Erase instructions.
Figure 6. Write Disable Instruction Sequence Diagram
Read Status Register (RDSR) (05h)
The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status
Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in
progress. When one of these cycles is in progress, it is recommended to check the Write In Progress
(WIP) bit before sending a new instruction to the device. It is also possible to read the Status Register
continuously, as shown in Figure 7.
Figure 7. Read Status Register Instruction Sequence Diagram
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
11
©2004 Eon Silicon Solution, Inc.,
www.eonssi.com
Rev. G, Issue Date: 2010/05/31