epc3xx
Absolute Maximum Ratings
(Notes 1, 2)
Reverse Voltage V
R
Breakdown Voltage between Diodes
Storage Temperature Range (T
S
)
Lead Temperature solder, 4 sec. (T
L
)
30.0 V
10.0 V
-40°C to +85°C
+260°C
Reverse Voltage (V
R
)
Operating Temperature (T
A
)
Relative Humidity (non-condensing)
Recommended Operating Conditions
Min.
1.5
-40
+5
Max.
20.0
+85
+95
Units
V
°C
%
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions
indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specific-
ations and test conditions, see Electrical Characteristics.
Note 2:
This device is a highly sensitive CMOS photodiodes with an ESD rating of JEDEC HBM class 2 (<2kV). Handling and assembly of
this device should only be done at ESD protected workstations.
Note 3:
Unless otherwise stated, measuring parameters are V
R
= 5.0 V, -40°C < T
A
< +85°C, R
L
= 50 Ω
Note 4:
Unless otherwise stated, measurement data apply for individual photo diodes in multi diode chips
General Characteristics
(Notes 3, 4)
Symbol
λ
S max.
λ
S
λ
η
φ
V
O
TC
V
TC
O
Wavelength
Wavelength Range
Spectral Sensitivity
Quantum Efficiency
Half angle
Open Circuit Voltage
Temperature Coefficient of I
SC
Temperature Coefficient of V
O
I
e
= 0.5 mW/cm
2
Parameter
Conditions/Comments
Min.
max. Sensitivity
S = 20 % of S
max
λ = 850nm, V
R
= 5V, I
e
= 1 mW/cm , type epc300
2
Values
Typ.
850
400
0.6
90
±60
300
0.38
-3.0
1030
Max.
Units
nm
nm
A/W
%
°
mV
%/K
mV/K
λ = 850nm, V
R
= 5V, I
e
= 1 mW/cm
2
, type epc300
Type Specific Characteristics
@ +25°C (all diodes of the array connected in parallel )
Symbol
I
P
Parameter
Photo Current
per diode
epc300
epc310
epc320
epc330
I
R
Dark Current
*
per diode
epc300
epc310
epc320
epc330
I
SC
Short-circuit Current
per diode
epc300
epc310
epc320
epc330
I
e
= 1 mW/cm
2
V
R
= 5 V, T
A
= 20°C
Conditions/Comments
Min.
V
R
= 5V, I
e
= 1 mW/cm ,
λ = 850 nm (NIR filter centered on 850nm)
2
Values
Typ.
2.5
5
10
20
40
20
40
80
160
320
2.5
5
10
20
40
250
500
1000
2000
4000
Max.
Units
μA
pA
μA
*
selected types available upon request
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
2
Datasheet epc3xx - V2.3
www.espros.ch