epc3xx
Symbol
Parameter
Conditions/Comments
Min.
t
r
Rise/Fall Time
all types
photo current measured at
R
L
= 50 Ω , λ = 850 nm, I
P
= 200 μA
V
R
= +1.5 V
V
R
= +5.0 V
V
R
= +10.0 V
C
O
Capacitance
per diode
epc300
epc310
epc320
epc330
NEP
Noise Equivalent Power
per diode
epc300
epc310
epc320
epc330
C
T
Cross Talk Suppression
epc320
epc330
between individual photo diodes on the same chip,
if the voltage difference V
diff
is <100mV between
individual diodes (cathodes)
V
R
= 5 V
V
R
= +5V, ƒ = 100kHz, E = 0
300
150
90
5
10
20
40
80
4.2x10
-15
6.0x10
-15
8.4x10
-15
1.2x10
-14
1.7x10
-14
50
dB
W/√Hz
pF
Values
Typ.
Max.
ns
Units
© 2011 ESPROS Photonics Corporation
Characteristics subject to change without notice
3
Datasheet epc3xx - V2.3
www.espros.ch
EPC [ ESPROS PHOTONICS CORP ]
