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M13S128168A_08 参数 Datasheet PDF下载

M13S128168A_08图片预览
型号: M13S128168A_08
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行双倍数据速率SDRAM [2M x 16 Bit x 4 Banks Double Data Rate SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 49 页 / 1542 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
AC Operating Test Conditions
Parameter
Input reference voltage for clock (V
REF
)
Input signal maximum peak swing
Input signal minimum slew rate
Input levels (V
IH
/V
IL
)
Input timing measurement reference level
Output timing reference level
Value
0.5*V
DDQ
1.5
1.0
V
REF
+0.31/V
REF
-0.31
V
REF
V
TT
M13S128168A
Unit
V
V
V/ns
V
V
V
AC Timing Parameter & Specifications
(V
DD
= 2.375V~2.75V, V
DDQ
=2.375V~2.75V, T
A
=0 °C to 70 °C )
(V
DD
= 2.6V~2.8V, V
DDQ
=2.6V~2.8V, T
A
=0 °C to 70 °C (for speed -4))
Parameter
Clock Period
Access time from CLK/ CLK
CLK high-level width
CLK low-level width
Data strobe edge to clock edge
Clock to first rising edge of DQS delay
Data-in and DM setup time (to DQS)
Data-in and DM hold time (to DQS)
DQ and DM input pulse width (for each
input)
Input setup time (fast slew rate)
Input hold time (fast slew rate)
Input setup time (slow slew rate)
Input hold time (slow slew rate)
Control and Address input pulse width
DQS input high pulse width
DQS input low pulse width
DQS falling edge to CLK rising-setup
time
DQS falling edge from CLK rising-hold
time
Data strobe edge to output data edge
Data-out high-impedance window from
CLK/ CLK
Data-out low-impedance window from
CLK/ CLK
CL3
Symbol
t
CK
t
AC
t
CH
t
CL
t
DQSCK
t
DQSS
t
DS
t
DH
t
DIPW
t
IS
t
IH
t
IS
t
IH
t
IPW
t
DQSH
t
DQSL
t
DSS
t
DSH
t
DQSQ
t
HZ
t
LZ
-4
Min
4.0
-0.75
0.45
0.45
-0.6
0.9
0.6
0.5
1.75
0.75
0.75
0.8
0.8
2.2
0.4
0.4
0.2
0.2
-
-0.7
-0.7
-5
Max
10
+0.75
0.55
0.55
+0.6
1.1
-
-
-
-
-
-
-
-
-
-
-
-
0.45
+0.7
+0.7
-6
Max
10
+0.7
0.55
0.55
+0.6
1.25
-
-
-
-
-
-
-
-
0.6
0.6
-
-
0.45
+0.7
+0.7
Min
5.0
-0.7
0.45
0.45
-0.6
0.75
0.45
0.45
1.75
0.75
0.75
0.8
0.8
2.2
0.4
0.4
0.2
0.2
-
-0.7
-0.7
Min
6.0
-0.7
0.45
0.45
-0.6
0.75
0.45
0.45
1.75
0.75
0.75
0.8
0.8
2.2
0.4
0.4
0.2
0.2
-
-0.7
-0.7
Max
10
+0.7
0.55
0.55
+0.6
1.25
-
-
-
-
-
-
-
-
0.6
0.6
-
-
0.45
+0.7
+0.7
Unit
ns
ns
t
CK
t
CK
ns
t
CK
ns
ns
ns
ns
ns
ns
ns
ns
t
CK
t
CK
t
CK
t
CK
ns
ns
ns
Elite Semiconductor Memory Technology Inc.
Publication Date : Dec. 2008
Revision : 2.2
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