ESMT
DC Specifications
(IDD values are for the operation range of Voltage and Temperature)
Parameter
Symbol
Test Condition
One bank;
t
CK
= t
CK
(IDD), t
RC
= t
RC
(IDD), t
RAS
= t
RAS
(IDD)min;
CKE is High, CS is HIGH between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
One bank; I
OUT
= 0mA;
BL = 4, CL = CL(IDD), AL = 0;
t
CK
= t
CK
(IDD), t
RC
= t
RC
(IDD),
t
RAS
= t
RAS
(IDD)min, t
RCD
= t
RCD
(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
All banks idle;
t
CK
= t
CK
(IDD); CKE is LOW;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
All banks idle;
t
CK
= t
CK
(IDD); CKE is HIGH, CS is HIGH;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
All banks idle;
t
CK
= t
CK
(IDD); CKE is HIGH, CS is HIGH;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
All banks open;
t
CK
= t
CK
(IDD); CKE is LOW;
Other control and address bus inputs
are STABLE;
Data bus input are FLOATING
Fast PDN Exit
MRS(12) = 0
Slow PDN Exit
MRS(12) = 1
15
M14D5121632A
Version
-2.5
-3
Unit
Operating Current
(Active - Precharge)
IDD0
70
65
mA
Operating Current
(Active - Read -
Precharge)
IDD1
85
80
mA
Precharge
Power-Down
Standby Current
IDD2P
10
10
mA
Precharge Quiet
Standby Current
IDD2Q
15
15
mA
Idle Standby Current IDD2N
20
20
mA
15
mA
Active Power-down
Standby Current
IDD3P
12
12
Active Standby
Current
IDD3N
All banks open;
t
CK
= t
CK
(IDD), t
RAS
= t
RAS
(IDD)max, t
RP
= t
RP
(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
All banks open, continuous burst Reads, I
OUT
= 0mA;
BL = 4, CL = CL (IDD), AL = 0;
t
CK
= t
CK
(IDD), t
RAS
= t
RAS
(IDD)max, t
RP
= t
RP
(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING;
Data pattern is the same as IDD4W;
All banks open, continuous burst Writes;
BL = 4, CL = CL (IDD), AL = 0;
t
CK
= t
CK
(IDD), t
RAS
= t
RAS
(IDD)max, t
RP
= t
RP
(IDD);
CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
40
35
mA
Operation Current
(Read)
IDD4R
170
145
mA
Operation Current
(Write)
IDD4W
160
140
mA
Elite Semiconductor Memory Technology Inc.
Publication Date : Feb. 2009
Revision : 1.1
6/59
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
