ESMT
Maximum Ratings
(Above which the useful life may be impaired. For user
guide-lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied ..............................................–55°C to +125°C
Supply Voltage to Ground Potential ................−0.4V to 4.6V
DC Voltage Applied to Outputs
in High-Z State[6, 7, 8] .......................................−0.4V to 3.7V
DC Input Voltage[6, 7, 8] ....................................−0.4V to 3.7V
Output Current into Outputs (LOW) ............................20 mA
Static Discharge Voltage ......................................... > 2001V
(per MIL-STD-883, Method 3015)
M24L416256SA
Latch-up Current ....................................................> 200 mA
Operating Range
Range
Extended
Industrial
Ambient Temperature (T
A
)
−25°C
to +85°C
−40°C
to +85°C
V
CC
2.7V to 3.6V
2.7V to 3.6V
DC Electrical Characteristics (Over the Operating Range)
Parameter
V
CC
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
Description
Supply Voltage
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH
Voltage
Input LOW
Voltage
Input Leakage
Current
Output Leakage
Current
V
CC
Operating
Supply Current
Test Conditions
Min.
2.7
V
CC
– 0.4
0.4
0.8 * V
CC
-0.4
GND
≤
V
IN
≤
Vcc
GND
≤
V
OUT
≤
Vcc, Output
Disabled
f = f
MAX
= 1/t
RC
f = 1 MHz
Automatic CE
Power-down
Current —CMOS
Inputs
Automatic CE
Power-down
Current —CMOS
Inputs
V
CC
= V
CCmax
,
I
OUT
= 0 mA,
CMOS level
-1
-1
14 for –55
14 for –60
8 for –70
1 for all speeds
V
CC
+ 0.4
0.6
+1
+1
22 for –55
22 for –60
15 for –70
5 for all speeds
-55, 60, 70
Typ.[5]
3.0
Max.
3.6
Unit
V
V
V
V
V
µA
µA
I
OH
=
−0.1
mA
I
OL
= 0.1 mA
V
CC
= 2.7V
V
CC
= 2.7V
I
CC
mA
I
SB1
CE
≥
V
CC
−
0.2V, V
IN
≥
V
CC
−
0.2V, V
IN
≤
0.2V, f = f
MAX
(Address
and Data Only),f = 0
( OE ,
WE
,
BHE
and
BLE
), V
CC
=
3.6V
CE
≥
V
CC
−
0.2V,
V
IN
≥
V
CC
−
0.2V or V
IN
≤
0.2V,
f = 0, V
CC
= 3.6V
150
250
µA
I
SB2
17
40
µA
Thermal Resistance[9]
Parameter
θ
JA
θ
JC
Description
Test Conditions
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA/JESD51.
VFBGA
55
17
Unit
°C/W
°C/W
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
Capacitance[9]
Parameter
C
IN
C
OUT
Notes:
6.V
IL(MIN)
= –0.5V for pulse durations less than 20 ns.
7.V
IH(Max)
= V
CC
+ 0.5V for pulse durations less than 20 ns.
8.Overshoot and undershoot specifications are characterized and are not 100% tested.
9.Tested initially and after any design or process changes that may affect these parameters.
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz
V
CC
= V
CC(typ)
Max.
8
8
Unit
pF
pF
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2008
Revision: 1.4
4/14
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
