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M52D128168A-7.5TG 参数 Datasheet PDF下载

M52D128168A-7.5TG图片预览
型号: M52D128168A-7.5TG
PDF下载: 下载PDF文件 查看货源
内容描述: 2M ×16位×4银行同步DRAM [2M x 16 Bit x 4 Banks Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 47 页 / 1188 K
品牌: ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
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ESMT
BA1 BA0 A11 A10
1
0
0
0
A9
0
A8 A7
0
0
Preliminary
A6
A5 A4
DS
0
A3
0
A2 A1 A0
PASR
M52D128168A
Address bus
Extended Mode Register Set
A2-A0
000
001
PASR
010
011
100
101
111
WT=0
4Bank
2 Bank (BankA& BankB) or
(BA1=0)
1 Bank (BankA) or
(BA0=BA1=0)
R
R
R
R
DS
A6-A5
00
01
10
11
Driver Strength
Full Strength
1/2 Strength
1/4 Strength
R
Remark R : Reserved
EXTENDED MODE REGISTER SET (EMRS)
The extended mode register stores for selecting PASR;TCSR;DS. The extended mode register set must be done before any active
command after the power up sequence. The extended mode register is written by asserting low on CS,RAS,CAS,WE and high on
BA1,low on BA0(The SDRAM should be in all bank precharge with CKE already high prior to writing into the extended more
register). The state of address pins
A0~An in the same cycle as CS,RAS,CAS,WE going low is written in the extended mode register. Refer to the table for specific
codes.
The extended mode register can be changed by using the same command and clock cycle requirements during operations as long
as all banks are in the idle state. The default value extended mode register is defined as half driving strength and all banks
refreshed.
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
10/47