ESMT
M52D128168A
Preliminary
Unit
V
V
ns
V
AC OPERATING TEST CONDITIONS
(V
DD
=1.8V
±
0.1V,T
A
= 0 °C ~ 70 °C )
Parameter
Value
Input levels (Vih/Vil)
0.9 x V
DDQ
/ 0.2
Input timing measurement reference level
0.5 x V
DDQ
Input rise and fall time
tr / tf = 1 / 1
Output timing measurement reference level
0.5 x V
DDQ
Output load condition
See Fig.2
1.8V
Vtt =0.5x VDDQ
13.9K
50
Output
VOH(DC) = VDDQ-0.2V, IOH = -0.1mA
VOL(DC) = 0.2V, IOL = 0.1mA
Output
Z0=50
20 pF
10.6K
20 pF
(Fig.1) DC Output Load circuit
(Fig.2) AC Output Load Circuit
OPERATING AC PARAMETER
(AC operating conditions unless otherwise noted)
Parameter
Row active to row active delay
RAS to CAS delay
Row precharge time
Row active time
@Operating
@Auto refresh
Last data in to new col. Address delay
Last data in to row precharge
Last data in to burst stop
Col. Address to col. Address delay
Mode Register command to Active or Refresh Command
Symbol
t
RRD
(min)
t
RCD
(min)
t
RP
(min)
t
RAS
(min)
t
RAS
(max)
Version
-7.5
15
15
15
48
100
63
80
1
2
1
1
2
2
1
64
90
-10
20
20
20
50
Unit
ns
ns
ns
ns
us
ns
ns
CLK
CLK
CLK
CLK
CLK
ea
ms
Note
1
1
1
1
-
1
1,5
2
2
2
3
-
4
6
Row cycle time
t
RC
(min)
t
RFC
(min)
t
CDL
(min)
t
RDL
(min)
t
BDL
(min)
t
CCD
(min)
t
MRD
(min)
CAS latency=3
CAS latency=2
Number of valid output data
Refresh period(4,096 rows)
t
BEF
(max)
Note:
1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and
then rounding off to the next higher integer.
2. Minimum delay is required to complete write.
3. All parts allow every cycle column address change.
4. In case of row precharge interrupt, auto precharge and read burst stop.
The earliest a precharge command can be issued after a Read command without the loss of data is CL+BL-2 clocks
5. A new command may be given t
RFC
after self refresh exit.
6. A maximum of eight consecutive AUTO REFRESH commands (with t
RFCmin
) can be posted to any given SDRAM,and
the maximum absolute interval between any AUTO REFRESH command and the next AUTO REFRESH command is
8x15.6μs.)
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
6/47
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
