ESMT
M52D128168A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on any pin relative to V
SS
Voltage on V
DD
supply relative to V
SS
Storage temperature
Power dissipation
Short circuit current
Note:
Preliminary
SYMBOL
V
IN
, V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
VALUE
-1.0 ~ 2.6
-1.0 ~ 2.6
-55 ~ +150
1
50
UNIT
V
V
°
C
W
mA
Permanent device damage may occur if ABSOLUTE MAXIMUM RATING are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITION
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C )
PARAMETER
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
Note:
SYMBOL
V
DD
, V
DDQ
V
IH
V
IL
V
OH
V
OL
I
IL
I
OL
MIN
1.7
0.8xV
DDQ
-0.3
V
DDQ
-0.2
-
-2
-2
TYP
1.8
1.8
0
-
-
-
-
MAX
1.9
V
DDQ
+0.3
0.3
-
0.2
2
2
UNIT
V
V
V
V
V
1
2
I
OH
= -0.1mA
I
OL
= 0.1mA
3
4
NOTE
μ
A
μ
A
1. V
IH(max)
= 2.2V AC for pulse width
≤
3ns acceptable.
2. V
IL(min)
= -1.0V AC for pulse width
≤
3ns acceptable.
3. Any input 0V
≤
V
IN
≤
V
DDQ
, all other pins are not under test = 0V.
4. D
out
is disabled , 0V
≤
V
OUT
≤
V
DDQ
.
CAPACITANCE
(V
DD
= 1.8V, T
A
= 25
°
C , f = 1MHZ)
PARAMETER
Input capacitance (A0 ~ A11, BA0 ~ BA1)
Input capacitance
(CLK, CKE, CS , RAS , CAS ,
WE
&
L(U)DQM)
Data input/output capacitance (DQ0 ~ DQ15)
C
IN2
1.5
3.5
pF
SYMBOL
C
IN1
MIN
1.5
MAX
3.0
UNIT
pF
C
OUT
2.0
4.5
pF
Elite Semiconductor Memory Technology Inc.
Publication Date: May. 2007
Revision: 1.0
4/47
ESMT [ ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. ]
